index - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

CRHEA

The laboratory is structured around the growth of materials by epitaxy, which is the core of its activity. These materials are currently grouped around the theme of wide bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material epitaxial on SiC, completes this list. Different growth methods are used to synthesise these materials: molecular jet epitaxy (under ultra-high vacuum) and various vapour phase epitaxies. Structural, optical and electrical analysis activities are organised around this epitaxy. The regional technology platform (CRHEATEC) is used to manufacture devices. In terms of applications, the laboratory covers both electronics (HEMT-type power transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and optoelectronics (light-emitting diodes, lasers, detectors, materials for non-linear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the 'nano' path, with fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).

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Semiconductors Doping AlN Al 3C–SiC III-N Photoluminescence Silicon Graphene LED LPCVD Semiconducteurs Aluminum nitride Bending High electron mobility transistors Strong coupling HEMT Nanostructures Bullseye antennas Nitrures d'éléments III Normally-off Light emitting diodes Molecular beam epitaxy Atom probe tomography Optical properties 4H-SiC Defects High electron mobility transistor Group III-nitrides Compressive stress AlGaN/GaN HEMT Schottky barrier diode Silicium InGaN Coalescence LEDs Excitons Épitaxie Thin films AIN Silicon carbide Gallium nitride GaN Microscopie électronique en transmission Metasurfaces Atomic force microscopy Transistor Chemical vapor deposition processes Epitaxy Dislocations Zinc oxide AlGaN III-nitride semiconductors Nitrure de gallium AlGaN/GaN Heterostructures Tunnel junction Microcavity Electrical properties and parameters CVD 2D materials MOCVD GaN-on-Si Metasurface Oxides Quantum wells III-V semiconductors Boron nitride Selective area growth Cathodoluminescence High electron mobility transistor HEMT Holography Flexible III-nitrides Contraintes Boîtes quantiques Épitaxie par jets moléculaires CRYSTALS Gallium nitride Silica Millimeter-wave power density Free-standing GaN MBE Quantum dots Traps ZnO Spectroscopy Metalens Bond order wave Van der Waals epitaxy Characterization Nanowire GaN Molecular beam epitaxy MBE Caractérisation Aluminum gallium nitride Chemical vapor deposition Nanoparticles 6H-SiC Transmission electron microscopy Nitrides