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CRHEA

The laboratory is structured around the growth of materials by epitaxy, which is the core of its activity. These materials are currently grouped around the theme of wide bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material epitaxial on SiC, completes this list. Different growth methods are used to synthesise these materials: molecular jet epitaxy (under ultra-high vacuum) and various vapour phase epitaxies. Structural, optical and electrical analysis activities are organised around this epitaxy. The regional technology platform (CRHEATEC) is used to manufacture devices. In terms of applications, the laboratory covers both electronics (HEMT-type power transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and optoelectronics (light-emitting diodes, lasers, detectors, materials for non-linear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the 'nano' path, with fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).

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Keywords

LPCVD Dislocations Metasurface AlN 3C–SiC Heterostructures Graphene Characterization High electron mobility transistor Optical properties Nitrides Al High electron mobility transistor HEMT Silicon AlGaN/GaN 6H-SiC 4H-SiC Semiconducteurs 2D materials Van der Waals epitaxy Silicon carbide Nanoparticles LED Silicium Microscopie électronique en transmission AlGaN Metasurfaces Nanowire Gallium nitride Aluminum nitride Free-standing GaN Nanostructures Chemical vapor deposition processes Molecular beam epitaxy MBE Semiconductors Holography Doping Normally-off Electrical properties and parameters Nitrures d'éléments III CVD Contact impedance LEDs Spectroscopy III-N GaN Épitaxie par jets moléculaires InGaN III-nitrides Microcavity Silica Transistor Schottky barrier diode Traps HEMT Coalescence Bullseye antennas High electron mobility transistors Contraintes GaN HEMT III-V semiconductors Quantum wells Gallium nitride GaN GaN-on-Si Transmission electron microscopy AIN Epitaxy Defects Aluminum gallium nitride Selective area growth Épitaxie Group III-nitrides Nitrure de gallium AlGaN/GaN HEMT MOCVD CRYSTALS Bending Boron nitride Metalens Tunnel junction MBE Atom probe tomography Compressive stress Millimeter-wave power density Bond order wave Zinc oxide Light emitting diodes ZnO Boîtes quantiques Atomic force microscopy Molecular beam epitaxy Chemical vapor deposition Photoluminescence Strong coupling III-nitride semiconductors Caractérisation Flexible Excitons Quantum dots Cathodoluminescence