index - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

CRHEA

The laboratory is structured around the growth of materials by epitaxy, which is the core of its activity. These materials are currently grouped around the theme of wide bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material epitaxial on SiC, completes this list. Different growth methods are used to synthesise these materials: molecular jet epitaxy (under ultra-high vacuum) and various vapour phase epitaxies. Structural, optical and electrical analysis activities are organised around this epitaxy. The regional technology platform (CRHEATEC) is used to manufacture devices. In terms of applications, the laboratory covers both electronics (HEMT-type power transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and optoelectronics (light-emitting diodes, lasers, detectors, materials for non-linear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the 'nano' path, with fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).

Last Deposits

Chargement de la page

Documents in Full Text

344

Notices

452

Statistics by Discipline

Keywords

AlGaN/GaN HEMT Molecular beam epitaxy Contraintes Transmission electron microscopy Excitons Group III-nitrides CVD Characterization Metasurfaces Millimeter-wave power density Épitaxie Nitrides Boron nitride ZnO Microcavity Gallium nitride LPCVD LED Semiconducteurs Metalens GaN-on-Si III-nitrides Nanoparticles Silicon Flexible III-N Van der Waals epitaxy Caractérisation MBE Tunnel junction Gallium nitride GaN 6H-SiC Light emitting diodes 2D materials Bending Epitaxy Selective area growth Schottky barrier diode 3C–SiC AlGaN/GaN GaN Photoluminescence Nitrure de gallium Chemical vapor deposition processes Bond order wave High electron mobility transistor Molecular beam epitaxy MBE Nanostructures Electrical properties and parameters Zinc oxide AlGaN Atom probe tomography Metasurface Strong coupling Épitaxie par jets moléculaires Microscopie électronique en transmission Spectroscopy Nitrures d'éléments III Boîtes quantiques InGaN Al Heterostructures Graphene Silica HEMT Defects MOCVD Doping Optical properties Chemical vapor deposition LEDs AlN Holography Cathodoluminescence CRYSTALS Atomic force microscopy Quantum wells Dislocations Contact impedance Silicium High electron mobility transistor HEMT Bullseye antennas Coalescence Normally-off Transistor Semiconductors GaN HEMT III-V semiconductors High electron mobility transistors III-nitride semiconductors Silicon carbide Traps Aluminum nitride Aluminum gallium nitride AIN Free-standing GaN Quantum dots Compressive stress Nanowire 4H-SiC