index - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Access content directly


The laboratory is structured around the growth of materials by epitaxy, which is the core of its activity. These materials are currently grouped around the theme of wide bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material epitaxial on SiC, completes this list. Different growth methods are used to synthesise these materials: molecular jet epitaxy (under ultra-high vacuum) and various vapour phase epitaxies. Structural, optical and electrical analysis activities are organised around this epitaxy. The regional technology platform (CRHEATEC) is used to manufacture devices. In terms of applications, the laboratory covers both electronics (HEMT-type power transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and optoelectronics (light-emitting diodes, lasers, detectors, materials for non-linear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the 'nano' path, with fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).

Documents in Full Text




Statistics by Discipline