index - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

CRHEA

The laboratory is structured around the growth of materials by epitaxy, which is the core of its activity. These materials are currently grouped around the theme of wide bandgap semiconductors: gallium nitrides (GaN, InN, AlN and alloys), zinc oxide (ZnO) and silicon carbide (SiC). Graphene, a zero bandgap material epitaxial on SiC, completes this list. Different growth methods are used to synthesise these materials: molecular jet epitaxy (under ultra-high vacuum) and various vapour phase epitaxies. Structural, optical and electrical analysis activities are organised around this epitaxy. The regional technology platform (CRHEATEC) is used to manufacture devices. In terms of applications, the laboratory covers both electronics (HEMT-type power transistors, Schottky diodes, tunnel diodes, spintronics, etc.) and optoelectronics (light-emitting diodes, lasers, detectors, materials for non-linear optics, microcavity structures for optical sources, etc.). The laboratory has also embarked on the 'nano' path, with fundamental aspects (nanoscience) and more applied aspects (nanotechnology for electronics or optics).

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Quantum dots Silicon AIN Group III-nitrides GaN-on-Si Flexible Optical properties Contact impedance Dislocations Doping 3C–SiC 2D materials Nanowire Holography Defects Light emitting diodes Atomic force microscopy 4H-SiC Traps Free-standing GaN MOCVD Épitaxie Caractérisation Compressive stress CVD Aluminum gallium nitride High electron mobility transistor HEMT 6H-SiC Graphene Transmission electron microscopy Bond order wave Cathodoluminescence Characterization Nanostructures Chemical vapor deposition processes Millimeter-wave power density GaN Normally-off CRYSTALS Bullseye antennas MBE Semiconducteurs Molecular beam epitaxy MBE III-nitrides Silica Molecular beam epitaxy Gallium nitride AlGaN/GaN HEMT LED Coalescence InGaN AlN Metasurfaces Nitrures d'éléments III Contraintes Photoluminescence Thin films High electron mobility transistors Selective area growth Épitaxie par jets moléculaires Gallium nitride GaN Nanoparticles Quantum wells Nitrure de gallium Silicium LEDs Boîtes quantiques Nitrides Semiconductors Microcavity Tunnel junction High electron mobility transistor Strong coupling Epitaxy Excitons HEMT Zinc oxide III-N Heterostructures Transistor Van der Waals epitaxy Aluminum nitride AlGaN Silicon carbide AlGaN/GaN Metalens Chemical vapor deposition III-V semiconductors III-nitride semiconductors Electrical properties and parameters ZnO Spectroscopy LPCVD Metasurface Atom probe tomography Boron nitride Schottky barrier diode Microscopie électronique en transmission Bending Al