Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells. - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 1993

Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.

Résumé

We present low-temperature-reflectance experiments, performed on GaAs-Ga1−xAlxAs asymmetrical double quantum wells, under in-plane uniaxial stress. The results, when compared to what is obtained from single quantum wells, exhibit some peculiar behaviors, which are typical effects of the asymmetry of the structures. A careful examination of these results is proposed in light of theoretical predictions about subband-to-subband transition energies and oscillator strengths. Our conclusion is that asymmetry makes it possible to obtain novel couplings between excitonic states, which cannot be accounted for without an accurate theoretical treatment of the Coulombic interaction, including intersubband mixings of valence wave functions.
Fichier non déposé

Dates et versions

hal-01176102 , version 1 (14-07-2015)

Identifiants

Citer

Bernard Gil, Pierre Lefebvre, Bonnel Philippe, Henry Mathieu, Christiane Deparis, et al.. Uniaxial-stress investigation of asymmetrical GaAs-(Ga,Al)As double quantum wells.. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 1993, 47 (4), pp.1954. ⟨10.1103/PhysRevB.47.1954⟩. ⟨hal-01176102⟩
30 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More