Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy. - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Solid State Communications Année : 2001

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Résumé

We have grown GaN films and GaN–AlGaN quantum wells (QWs) on homoepitaxial substrates, by molecular beam epitaxy using ammonia. Both the GaN film and the QW are found to have superior excitonic recombination properties which are extremely promising for the development of indium free ultra-violet lasers based on nitrides.

Dates et versions

hal-01302922 , version 1 (15-04-2016)

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Thierry Taliercio, Mathieu Gallart, Pierre Lefebvre, Aurélien Morel, Bernard Gil, et al.. Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.. Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩. ⟨hal-01302922⟩
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