Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes. - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2001

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Résumé

We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8
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Dates et versions

hal-01303205 , version 1 (16-04-2016)

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Pierre Lefebvre, Thierry Taliercio, Aurélien Morel, Jacques Allègre, Mathieu Gallart, et al.. Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.. Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩. ⟨hal-01303205⟩
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