Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells. - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2007

Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.

Résumé

Time-integrated photoluminescence experiments are used to study the excitonic optical recombinations in wurtzite ZnO∕Zn1−xMgxO single quantum wells of varying widths and magnesium compositions. By comparing experimental results with a variational calculation of excitonic energies, the authors determine the magnitude of the built-in electric field that is induced by both spontaneous and piezoelectricpolarizations. It is found that the electric field varies linearly with magnesium composition. By taking into consideration the well-known distribution of electric field among the barrier and the well layers in multiquantum wells, the authors show that their results are fully consistent with previously reported data.
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Dates et versions

hal-01304724 , version 1 (20-04-2016)

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Citer

Thierry Bretagnon, Pierre Lefebvre, Thierry Guillet, Thierry Taliercio, Bernard Gil, et al.. Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.. Applied Physics Letters, 2007, 90 (20), pp.201912. ⟨10.1063/1.2740576⟩. ⟨hal-01304724⟩
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