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Communication Dans Un Congrès Année : 2003

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Résumé

We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal ionization of bound excitons and the high temperature stability of free excitons. For a temperature higher than 60 K the PL spectra are totally dominated by the free exciton line.

Dates et versions

hal-01312489 , version 1 (06-05-2016)

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Citer

Romuald Intartaglia, Thierry Taliercio, Bernard Gil, Pierre Lefebvre, Pierre Valvin, et al.. Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers. 5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩. ⟨hal-01312489⟩
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