Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue Journal of Applied Physics Année : 2005

Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures

Z. Bougrioua
J. Bethoux
  • Fonction : Auteur
M. Azize
  • Fonction : Auteur
O. Tottereau
  • Fonction : Auteur

Résumé

The relaxation mechanisms in metal-organic vapor phase epitaxy grown (Al,Ga)N∕GaN heterostructures are studied. The first stage of the relaxation process is a two-dimensional–three-dimensional growth transition with the formation of mesalike islands separated by V-shaped trenches. The tensile stress relief is obtained by an elastic relaxation of the islands edges. In the case of AlN∕GaN, the apexes of the V trenches reach the heterointerface and misfit dislocations are nucleated at the islands coalescence region. These dislocations are a type and glide in the basal plane to promote further relaxation. For (Al,Ga)N∕GaN with an Al concentration below 70%, the apexes of the V trenches do not reach the heterointerface, prohibiting the nucleation of misfit dislocations. For thicker layers, the next stage of the relaxation is the cracking of the films.
Fichier non déposé

Dates et versions

hal-02906534 , version 1 (24-07-2020)

Identifiants

Citer

P. Vennegues, Z. Bougrioua, J. Bethoux, M. Azize, O. Tottereau. Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures. Journal of Applied Physics, 2005, 97 (2), pp.024912. ⟨10.1063/1.1828607⟩. ⟨hal-02906534⟩
15 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More