Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates - Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications Accéder directement au contenu
Article Dans Une Revue physica status solidi (c) Année : 2006

Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates

Résumé

The microstructure of (11‐20) GaN films grown on (1‐102) sapphire substrates is studied by transmission electron microscopy. The predominant defects emerging at the surface of a 1‐2 μm thick layers are basal stacking faults of I1 type (1/6<20‐23> displacement vector). These defects are either terminated in the films by partial dislocations with a 1/6<20‐23> Burgers vector or are connected to another basal stacking fault by a prismatic stacking fault with a 1/2<10‐11> displacement vector. All the stacking faults, originate from the interfacial region.

Dates et versions

hal-02906705 , version 1 (25-07-2020)

Identifiants

Citer

P. Vennegues, F. Mathal, Z. Bougrioua. Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates. physica status solidi (c), 2006, 3 (6), pp.1658-1661. ⟨10.1002/pssc.200565292⟩. ⟨hal-02906705⟩
9 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More