Malices et fourberies des boîtes quantiques GaN/AlN.
Pierre Lefebvre
,
Thierry Bretagnon
,
Thierry Taliercio
,
Thierry Guillet
,
Bernard Gil
et al.
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO. , Jun 2004, La Grande Motte, France.
Conference poster
hal-01312258v1
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Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers
Romuald Intartaglia
,
Thierry Taliercio
,
Bernard Gil
,
Pierre Lefebvre
,
Pierre Valvin
et al.
5th International Conference on Nitride Semiconductors - ICNS 5. , May 2003, Nara, Japan. pp.2631,
⟨10.1002/pssc.200303271⟩
Conference papers
istex
hal-01312489v1
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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.
Pierre Lefebvre
,
Thierry Taliercio
,
Aurélien Morel
,
Jacques Allègre
,
Mathieu Gallart
et al.
Journal articles
hal-01303205v1
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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method
Thierry Chassagne
,
Gabriel Ferro
,
H. Haas
,
H. Mank
,
André Leycuras
et al.
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004) , Jun 2004, MONTPELLIER, France. pp.524-530,
⟨10.1002/pssa.200460415⟩
Conference papers
istex
hal-00389901v1
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Optical properties of GaN/AlN quantum boxes under high photo-excitation
S. Kalliakos
,
Thierry Bretagnon
,
Pierre Lefebvre
,
Sandrine Juillaguet
,
T. Taliercio
et al.
Conference poster
istex
hal-00543736v1
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Potentialities of GaN-based microcavities in strong coupling regime at room temperature
N. Antoine-Vincent
,
F. Natali
,
D. Byrne
,
P. Disseix
,
A. Vasson
et al.
Journal articles
istex
hal-03935162v1
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Anisotropic propagation of surface acoustic waves on nitride layers
J. Pedrós
,
F. Calle
,
J. Grajal
,
R.J. Jiménez Riobóo
,
C. Prieto
et al.
Journal articles
istex
hal-02906531v1
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High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications
Christophe Consejo
,
Sylvie Contreras
,
Leszek Konczewicz
,
P. Lorenzini
,
Y. Cordier
et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies , Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Conference papers
hal-00543735v1
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Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.
Thierry Taliercio
,
Mathieu Gallart
,
Pierre Lefebvre
,
Aurélien Morel
,
Bernard Gil
et al.
Journal articles
istex
hal-01302922v1
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Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells
Aurélien Morel
,
Pierre Lefebvre
,
Thierry Taliercio
,
Bernard Gil
,
Nicolas Grandjean
et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002. , Jul 2002, Toulouse, France. pp.64-67,
⟨10.1016/S1386-9477(02)00762-2⟩
Conference papers
istex
hal-01319596v1
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Mixed III-V-N semiconductors: a challenge for tomorrow?
E. Tournié
,
Bernard Gil
Low-Dimensional Nitride Semiconductors , Oxford University Press, pp.415-455, 2002, 9780198509745
Book sections
hal-02342609v1
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Guided elastic waves in GaN-over-Sapphire
Serge Camou
,
Thomas Pastureaud
,
David Schenck
,
Sylvain Ballandras
,
Vincent Laude
et al.
Electronics Letters , 2001, 37, pp.1053-1055
Journal articles
hal-00095933v1
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Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.
Sokratis Kalliakos
,
Xuebin Zhang
,
Thierry Taliercio
,
Pierre Lefebvre
,
Bernard Gil
et al.
Journal articles
hal-01303257v1
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Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN
Thierry Taliercio
,
Bernard Gil
,
Pierre Lefebvre
,
Marie-Amandine Pinault
,
Eric Tournié
et al.
Conference papers
istex
hal-01319577v1
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Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation.
Pierre Lefebvre
,
Sokratis Kalliakos
,
Thierry Bretagnon
,
Pierre Valvin
,
Thierry Taliercio
et al.
Journal articles
hal-01303935v1
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High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz
Nicolas Vellas
,
Christophe Gaquière
,
Yannick Guhel
,
Matthieu Werquin
,
Frédéric Bue-Erkmen
et al.
Journal articles
hal-00149698v1
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Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
Yvon Cordier
,
P. Lorenzini
,
Jean Michel Chauveau
,
D. Ferré
,
Ydir Androussi
et al.
Journal articles
hal-00018494v1
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Growth by Molecular Beam Epitaxy and Optical Properties of a Ten-Period AlGaN/AlN Distributed Bragg Reflector on (111)Si
F. Semond
,
N. Antoine-Vincent
,
N. Schnell
,
G. Malpuech
,
M. Leroux
et al.
Journal articles
hal-03935085v1
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Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.
Sokratis Kalliakos
,
Thierry Bretagnon
,
Pierre Lefebvre
,
Thierry Taliercio
,
Bernard Gil
et al.
Journal articles
hal-01303942v1
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Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.
Nicolas Grandjean
,
Benjamin Damilano
,
Jean Massies
,
Gérard Neu
,
M Teissere
et al.
Journal articles
hal-01302893v1
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Failures in the discrete models for flow duct with perforations: an experimental investigation
Yves Aurégan
,
M. Leroux
Journal articles
istex
hal-02540213v1
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Potentialities of GaN-based microcavities in strong coupling regime at room temperature.
N. Ollier
,
F. Natali
,
D. Byrne
,
Pierre Disseix
,
A. Vasson
et al.
Journal articles
istex
hal-00272554v1
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Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots
S. Kalliakos
,
Thierry Bretagnon
,
Pierre Lefebvre
,
Sandrine Juillaguet
,
T. Taliercio
et al.
Conference poster
istex
hal-00543738v1
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Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates
N. Antoine-Vincent
,
F. Natali
,
M. Mihailovic
,
A. Vasson
,
J. Leymarie
et al.
Journal articles
hal-03935128v1
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Modelling and Spectroscopy of GaN Microcavities
N. Antoine-Vincent
,
F. Natali
,
P. Disseix
,
M. Mihailovic
,
A. Vasson
et al.
Journal articles
hal-03935105v1
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Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.
Pierre Lefebvre
,
Thierry Bretagnon
,
Thierry Taliercio
,
Thierry Guillet
,
Bernard Gil
et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices". , Sep 2004, Ascona, Switzerland
Conference poster
hal-01312253v1
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Photoluminescence of GaN microcrystallites prepared by a new solvothermal process
Cécile Collado
,
Graziella Goglio
,
Gérard Demazeau
,
Albert-Serge Barriere
,
Lionel Hirsch
et al.
Journal articles
istex
hal-00183531v1
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Potentialities of GaN-Based Microcavities Grown on Silicon Substrates
N. Antoine-Vincent
,
F. Natali
,
F. Semond
,
M. Leroux
,
N. Grandjean
et al.
Journal articles
hal-03935058v1
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Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.
Pierre Lefebvre
,
Sokratis Kalliakos
,
Thierry Bretagnon
,
Thierry Taliercio
,
Bernard Gil
et al.
E-MRS Spring Meeting - Symposium L. , European Materials Research Society, May 2004, Strasbourg, France
Conference papers
hal-01310227v1
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Carrier recombination dynamics in GaN/AlN quantum dots.
Thierry Bretagnon
,
Pierre Lefebvre
,
Pierre Valvin
,
Thierry Taliercio
,
Thierry Guillet
et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. , Jun 2004, Montpellier, France
Conference poster
hal-01310832v1
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