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Malices et fourberies des boîtes quantiques GaN/AlN.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Journées Nationales Micro- et Opto-électronique – Xèmes JNMO., Jun 2004, La Grande Motte, France.
Conference poster hal-01312258v1

Coexistence in photoluminescence of free exciton and bound exciton in low nitrogen content GaInNAs layers

Romuald Intartaglia , Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Pierre Valvin et al.
5th International Conference on Nitride Semiconductors - ICNS 5., May 2003, Nara, Japan. pp.2631, ⟨10.1002/pssc.200303271⟩
Conference papers istex hal-01312489v1

Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Pierre Lefebvre , Thierry Taliercio , Aurélien Morel , Jacques Allègre , Mathieu Gallart et al.
Applied Physics Letters, 2001, 78 (11), pp.1538. ⟨10.1063/1.1352664⟩
Journal articles hal-01303205v1

Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method

Thierry Chassagne , Gabriel Ferro , H. Haas , H. Mank , André Leycuras et al.
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC 2004), Jun 2004, MONTPELLIER, France. pp.524-530, ⟨10.1002/pssa.200460415⟩
Conference papers istex hal-00389901v1

Optical properties of GaN/AlN quantum boxes under high photo-excitation

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
5th International Conference on Nitride Semiconductors (ICNS-5), May 2003, Nara, Japan. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim , Physica Status Solidi (c), 7, pp.2666-2669, 2003, ⟨10.1002/pssc.200303270⟩
Conference poster istex hal-00543736v1

Potentialities of GaN-based microcavities in strong coupling regime at room temperature

N. Antoine-Vincent , F. Natali , D. Byrne , P. Disseix , A. Vasson et al.
Superlattices and Microstructures, 2004, 36 (4-6), pp.599-606. ⟨10.1016/j.spmi.2004.09.017⟩
Journal articles istex hal-03935162v1

Anisotropic propagation of surface acoustic waves on nitride layers

J. Pedrós , F. Calle , J. Grajal , R.J. Jiménez Riobóo , C. Prieto et al.
Superlattices and Microstructures, 2004, 36 (4-6), pp.815-823. ⟨10.1016/j.spmi.2004.09.044⟩
Journal articles istex hal-02906531v1

High temperature electrical investigations of (AI,Ga)N/GaN heterostructures - Hall sensor applications

Christophe Consejo , Sylvie Contreras , Leszek Konczewicz , P. Lorenzini , Y. Cordier et al.
7th International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Jun 2004, Montpellier (FRANCE), France. pp.1438-1443
Conference papers hal-00543735v1

Cw and time-resolved spectroscopy in homoepitaxial GaN films and GaN-GaAlN quantum wells grown by molecular beam epitaxy.

Thierry Taliercio , Mathieu Gallart , Pierre Lefebvre , Aurélien Morel , Bernard Gil et al.
Solid State Communications, 2001, 117 (7), pp.445. ⟨10.1016/S0038-1098(00)00475-0⟩
Journal articles istex hal-01302922v1

Two-dimensional “pseudo-donor–acceptor-pairs” model of recombination dynamics in InGaN/GaN quantum wells

Aurélien Morel , Pierre Lefebvre , Thierry Taliercio , Bernard Gil , Nicolas Grandjean et al.
International Conference on Superlattices, Nano-structures and Nano-devices - ICSNN 2002., Jul 2002, Toulouse, France. pp.64-67, ⟨10.1016/S1386-9477(02)00762-2⟩
Conference papers istex hal-01319596v1

Mixed III-V-N semiconductors: a challenge for tomorrow?

E. Tournié , Bernard Gil
Low-Dimensional Nitride Semiconductors, Oxford University Press, pp.415-455, 2002, 9780198509745
Book sections hal-02342609v1

Guided elastic waves in GaN-over-Sapphire

Serge Camou , Thomas Pastureaud , David Schenck , Sylvain Ballandras , Vincent Laude et al.
Electronics Letters, 2001, 37, pp.1053-1055
Journal articles hal-00095933v1

Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes.

Sokratis Kalliakos , Xuebin Zhang , Thierry Taliercio , Pierre Lefebvre , Bernard Gil et al.
Applied Physics Letters, 2002, 80 (3), pp.428. ⟨10.1063/1.1433165⟩
Journal articles hal-01303257v1

Light-Hole and Heavy-Hole Excitons: the Right Probe for the Physics of Low N Content GaAsN

Thierry Taliercio , Bernard Gil , Pierre Lefebvre , Marie-Amandine Pinault , Eric Tournié et al.
International Workshop on Nitride Semiconductors (IWN 2002), Jul 2002, Aix-la-Chapelle, Germany. pp.778-781, ⟨10.1002/1521-3951(200212)234:3<778::AID-PSSB778>3.0.CO;2-H⟩
Conference papers istex hal-01319577v1

Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Pierre Valvin , Thierry Taliercio et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (3), pp.035307. ⟨10.1103/PhysRevB.69.035307⟩
Journal articles hal-01303935v1

High linearity performance of gallium nitride HEMT devices on silicon substrate at 4 GHz

Nicolas Vellas , Christophe Gaquière , Yannick Guhel , Matthieu Werquin , Frédéric Bue-Erkmen et al.
IEEE Electron Device Letters, 2002, 23 (8), pp.461-463. ⟨10.1109/LED.2002.801328⟩
Journal articles hal-00149698v1

Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs

Yvon Cordier , P. Lorenzini , Jean Michel Chauveau , D. Ferré , Ydir Androussi et al.
Journal of Crystal Growth, 2003, 251, pp.822. ⟨10.1016/S0022-0248(02)02316-3⟩
Journal articles hal-00018494v1

Growth by Molecular Beam Epitaxy and Optical Properties of a Ten-Period AlGaN/AlN Distributed Bragg Reflector on (111)Si

F. Semond , N. Antoine-Vincent , N. Schnell , G. Malpuech , M. Leroux et al.
physica status solidi (a), 2001, 183 (1), pp.163-167. ⟨10.1002/1521-396X(200101)183:1%3C163::AID-PSSA163%3E3.0.CO;2-0⟩
Journal articles hal-03935085v1

Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes.

Sokratis Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Thierry Taliercio , Bernard Gil et al.
Journal of Applied Physics, 2004, 96 (1), pp.180. ⟨10.1063/1.1753085⟩
Journal articles hal-01303942v1

Optical properties of GaN epilayers and GaN/AlGaN quantum wells grown by molecular beam epitaxy on GaN(0001) single crystal substrate.

Nicolas Grandjean , Benjamin Damilano , Jean Massies , Gérard Neu , M Teissere et al.
Journal of Applied Physics, 2000, 88 (1), pp.183. ⟨10.1063/1.373640⟩
Journal articles hal-01302893v1

Failures in the discrete models for flow duct with perforations: an experimental investigation

Yves Aurégan , M. Leroux
Journal of Sound and Vibration, 2003, 265 (1), pp.109-121. ⟨10.1016/S0022-460X(02)01442-6⟩
Journal articles istex hal-02540213v1

Potentialities of GaN-based microcavities in strong coupling regime at room temperature.

N. Ollier , F. Natali , D. Byrne , Pierre Disseix , A. Vasson et al.
Superlattices and Microstructures, 2004, 34 (4-6), pp.599-606. ⟨10.1016/j.spmi.2004.09.017⟩
Journal articles istex hal-00272554v1

Nontrivial carrier recombination dynamics and optical properties of over-excited GaN/AlN quantum dots

S. Kalliakos , Thierry Bretagnon , Pierre Lefebvre , Sandrine Juillaguet , T. Taliercio et al.
Eun-Kyung Suh; Euijoon Yoon; Hyung Jae Lee. 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED 2004), Mar 2004, Gyeongju, South Korea. WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim, Physica Status Solidi (b), 241 (12), pp.2779-2782, 2004, ⟨10.1002/pssb.200404996⟩
Conference poster istex hal-00543738v1

Determination of the refractive indices of AlN, GaN, and AlxGa1−xN grown on (111)Si substrates

N. Antoine-Vincent , F. Natali , M. Mihailovic , A. Vasson , J. Leymarie et al.
Journal of Applied Physics, 2003, 93 (9), pp.5222-5226. ⟨10.1063/1.1563293⟩
Journal articles hal-03935128v1

Modelling and Spectroscopy of GaN Microcavities

N. Antoine-Vincent , F. Natali , P. Disseix , M. Mihailovic , A. Vasson et al.
physica status solidi (a), 2002, 190 (1), pp.187-192. ⟨10.1002/1521-396X(200203)190:1%3C187::AID-PSSA187%3E3.0.CO;2-A⟩
Journal articles hal-03935105v1

Continuous-wave versus time-resolved photo-luminescence of GaN/AlN quantum dots.

Pierre Lefebvre , Thierry Bretagnon , Thierry Taliercio , Thierry Guillet , Bernard Gil et al.
Summer School "Semiconductor Quantum Dots: Physics and Devices"., Sep 2004, Ascona, Switzerland
Conference poster hal-01312253v1

Photoluminescence of GaN microcrystallites prepared by a new solvothermal process

Cécile Collado , Graziella Goglio , Gérard Demazeau , Albert-Serge Barriere , Lionel Hirsch et al.
Materials Research Bulletin, 2002, 1 (5), pp.841-848. ⟨10.1016/S0025-5408(02)00716-X⟩
Journal articles istex hal-00183531v1

Potentialities of GaN-Based Microcavities Grown on Silicon Substrates

N. Antoine-Vincent , F. Natali , F. Semond , M. Leroux , N. Grandjean et al.
physica status solidi (a), 2001, 188 (2), pp.519-522. ⟨10.1002/1521-396X(200112)188:2%3C519::AID-PSSA519%3E3.0.CO;2-7⟩
Journal articles hal-03935058v1

Carrier Recombination Dynamics of Over-Excited Hexagonal GaN/AlN Quantum Dots.

Pierre Lefebvre , Sokratis Kalliakos , Thierry Bretagnon , Thierry Taliercio , Bernard Gil et al.
E-MRS Spring Meeting - Symposium L., European Materials Research Society, May 2004, Strasbourg, France
Conference papers hal-01310227v1

Carrier recombination dynamics in GaN/AlN quantum dots.

Thierry Bretagnon , Pierre Lefebvre , Pierre Valvin , Thierry Taliercio , Thierry Guillet et al.
EXMATEC'04 - 7th Int. Conf. on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies., Jun 2004, Montpellier, France
Conference poster hal-01310832v1