Polarized emission from a single GaN/AlN quantum dot : Experiment and theory
Thierry Guillet
,
Richard Bardoux
,
B. Gil
,
T. Bretagnon
,
P. Lefebvre
et al.
International Conference on LightMatter Coupling in Nanostructures (PLMCN8) , Apr 2008, Tokyo, Japan
Conference papers
hal-00389909v1
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Micro-Photoluminescence of isolated GaN/AlN hexagonal QDs: Role of the trapping dynamics of charges at AlN defects
Richard Bardoux
,
Pierre Lefebvre
,
Thierry Guillet
,
Thierry Bretagnon
,
Thierry Taliercio
et al.
14th European Molecular Beam Epitaxy Workshop (14th Euro-MBE) , Mar 2007, Grenade, Spain
Conference papers
hal-01306794v1
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ZnO / (Zn,Mg)O Quantum Wells : a Time Resolved Photoluminescence Study
Thierry Bretagnon
,
Pierre Lefebvre
,
Bernard Gil
,
Christian Morhain
International Symposium on Blue Lasers and Light Emitting Diodes – ISBLLED06. , May 2006, Montpellier, France
Conference poster
hal-01309698v1
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Determination of internal electric field in ZnO/(Zn,Mg)O quantum wells from time resolved photoluminescence experiments
Thierry Bretagnon
,
Thierry Guillet
,
Pierre Lefebvre
,
Thierry Taliercio
,
Bernard Gil
et al.
28th International Conference on the Physics of Semiconductors - ICPS 28. , Jul 2006, Vienne, Austria.
Conference poster
hal-01309701v1
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Barrier composition dependence of the internal electric field in ZnO∕Zn1−xMgxO quantum wells.
Thierry Bretagnon
,
Pierre Lefebvre
,
Thierry Guillet
,
Thierry Taliercio
,
Bernard Gil
et al.
Journal articles
hal-01304724v1
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Nanoepitaxy of InAs∕InP quantum dots by metalorganic vapor phase epitaxy for 1.55μm emitters
J. Benoit
,
L. Le Gratiet
,
G. Beaudoin
,
A. Michon
,
Guillaume Saint-Girons
et al.
Applied Physics Letters , 2006, 88 (4), pp.041113
Journal articles
hal-01939900v1
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Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy
M. Mérat-Combes
,
Guillaume Saint-Girons
,
A. Michon
,
I. Sagnes
,
G. Beaudoin
et al.
Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces , 2007, 601 (13), pp.2765-2768
Journal articles
hal-01939916v1
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Preliminary results of bench implementation for the study of terahertz amplification in gallium nitride quantum wells
T. Laurent
,
P. Nouvel
,
J. Torres
,
Laurent Chusseau
,
C. Palermo
et al.
Journal articles
hal-01904183v1
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Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures
P. Vennegues
,
Z. Bougrioua
,
J. Bethoux
,
M. Azize
,
O. Tottereau
et al.
Journal articles
hal-02906534v1
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Web Analysis Traffic Challenge: Description and Results
Gérard Dray
,
C. Raissi
,
J. Brissaud
,
Pascal Poncelet
,
Mathieu Roche
et al.
Discovery Challenge ECML/PKDD , Sep 2007, Poland
Conference papers
hal-00822307v1
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Quantitative study of the Giant Zeeman Effect in (Zn,Co)O and (Ga,Mn)N
W. Pacuski
,
D. Ferrand
,
P. Kossacki
,
Joel Cibert
,
J. Gaj
et al.
Journal articles
hal-04038114v1
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Strong light-matter coupling in GaN microcavities grown on silicon(111) at room temperature
I. R. Sellers
,
F. Semond
,
M. Leroux
,
J. Massies
,
A.-L. Henneghien
et al.
physica status solidi (b) , 2006, 243, pp.1639
Journal articles
hal-00090382v1
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Linear polarization of the emission of a single polar GaN/AlN quantum dot
Richard Bardoux
,
Pierre Lefebvre
,
Thierry Guillet
,
Thierry Bretagnon
,
Thierry Taliercio
et al.
7th International Conference of Nitride Semiconductors (ICNS-7) , Sep 2007, Las Vegas, United States
Conference papers
hal-01306799v1
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Characterization of structural defects in (110) GaN films grown on (102) sapphire substrates
P. Vennegues
,
F. Mathal
,
Z. Bougrioua
Journal articles
istex
hal-02906705v1
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Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy
Philippe Vennegues
,
Zahia Bougrioua
Journal articles
hal-02906710v1
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Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
Z. Bougrioua
,
M. Laügt
,
P. Vennegues
,
I. Cestier
,
T. Gühne
et al.
Journal articles
istex
hal-02906717v1
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Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells.
Christian Morhain
,
Thierry Bretagnon
,
Pierre Lefebvre
,
X Tang
,
Pierre Valvin
et al.
Journal articles
hal-01304048v1
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Radiative lifetime of a single electron-hole pair in GaN∕AlN quantum dots.
Thierry Bretagnon
,
Pierre Lefebvre
,
Pierre Valvin
,
Richard Bardoux
,
Thierry Guillet
et al.
Journal articles
hal-01304534v1
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Thermodynamic description of the competition between quantum dots and quantum dashes during metalorganic vapor phase epitaxy in the In As ∕ In P ( 001 ) system: Experiment and theory
Guillaume Saint-Girons
,
A. Michon
,
I. Sagnes
,
G. Beaudoin
,
G. Patriarche
et al.
Physical Review B: Condensed Matter and Materials Physics (1998-2015) , 2006, 74 (24)
Journal articles
hal-01939904v1
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Effect of cap-layer growth rate on morphology and luminescence of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy
A. Michon
,
I. Sagnes
,
G. Patriarche
,
G. Beaudoin
,
M. Mérat-Combes
et al.
Journal of Applied Physics , 2006, 100 (3), pp.033508
Journal articles
hal-01939903v1
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Regrowth of GaN quantum wells on GaN substrates for TeraHertz generation by amplification of transverse electromagnetic waves
M. Chmielowska
,
S. Chenot
,
Y. Cordier
,
T. Laurent
,
P. Nouvel
et al.
18th European Heterostructure Technology Workshop – HETECH , 2009, Günzburg / Ulm, Germany
Conference papers
hal-02455804v1
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Sr4Ru2O9 films grown by pulsed laser deposition
R. Chmielowski
,
V. Madigou
,
M. Blicharski
,
Christine Leroux
Journal articles
istex
hal-01727390v1
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Polarized emission from a single GaN/AlN quantum dot : Experiment and theory
Thierry Guillet
,
Richard Bardoux
,
Thierry Bretagnon
,
Bernard Gil
,
Pierre Lefebvre
et al.
Journées Boîtes Quantiques , Jun 2009, Grenoble, France
Conference papers
hal-00633306v1
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In-plane polarities of nonpolar wurtzite epitaxial films deposited on m- and r-plane sapphire substrates
Philippe Vennéguès
,
Tiankai Zhu
,
Z. Bougrioua
,
Denis Martin
,
J. Zuniga-Perez
et al.
Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes , 2009, 48 (9), pp.090211-1-3.
⟨10.1143/JJAP.48.090211⟩
Journal articles
hal-00472455v1
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Interplay between bragg- and cavity-mode polaritons in a ZnO microcavity
Stéphane Faure
,
Christelle Brimont
,
Thierry Guillet
,
T. Bretagnon
,
B. Gil
et al.
Physics of Light-Matter Coupling in Nanostructures (PLMCN9) , Apr 2009, Lecce, Italy
Conference papers
hal-00389907v1
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Strain and wafer curvature of 3C-SiC films on silicon : influence of the growth conditions
Marcin Zielinski
,
S. Ndiaye
,
Thierry Chassagne
,
Sandrine Juillaguet
,
Renata Lewandowska
et al.
International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies (EXMATEC'06) No8 , May 2006, Cádiz, Spain. pp.981-986
Conference papers
hal-00389884v1
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Spectroscopy of a bulk microcavity grown on Si(111)
Joël Leymarie
,
Nadege Ollier
,
Franck Natali
,
Declan Byrne
,
Pierre Disseix
et al.
Japanese Journal of Applied Physics , 2005, Vol 44, No 7A, pp4902-4908
Journal articles
hal-00096629v1
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Investigation of Non-Radiative Processes in InAs/(Ga,In)(N,As) Quantum Dots.
Maxime Hugues
,
Mirja Richter
,
Jean-Michel Chauveau
,
Benjamin Damilano
,
Jean-Yves Duboz
et al.
Journal articles
hal-01304760v1
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InAs/InP(001) quantum dots and quantum sticks grown by MOVPE: shape, anisotropy and formation process
A. Michon
,
G. Patriarche
,
I. Sagnes
,
G. Beaudoin
,
Guillaume Saint-Girons
et al.
physica status solidi (c) , 2006, 3 (11), pp.3928-3931
Journal articles
hal-01939909v1
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Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon.
F. Semond
,
I.R. Sellers
,
F. Natali
,
D. Byrne
,
M. Leroux
et al.
Applied Physics Letters , 2005, pp.3
Journal articles
hal-00272586v1
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