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Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

C. Sgroi , J. Brault , J.-Y. Duboz , S. Chenot , P. Vennéguès et al.
Applied Physics Letters, 2022, 120 (1), pp.012105. ⟨10.1063/5.0073864⟩
Journal articles hal-03784787v1

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

L Abou-Hamdan , Sobhe Hamyeh , A Iskandar , R Tauk , J Brault et al.
Nanotechnology, 2021, 32 (11), pp.115703. ⟨10.1088/1361-6528/abce79⟩
Journal articles hal-03106374v1

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

B. Orfao , G. Di Gioia , B. Vasallo , S. Pérez , J. Mateos et al.
Journal of Applied Physics, 2022, 132 (4), pp.044502. ⟨10.1063/5.0100426⟩
Journal articles hal-03741441v1

GaN-based HEMTs operating as zero-bias microwave detectors at low temperature

G. Paz , I. Iniguez de La Torre , H. Sanchez , Virginie Hoel , Y. Cordier et al.
13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Seville, Spain
Conference papers hal-03340956v1

Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template

Julien Bassaler , Rémi Comyn , C. Bougerol , Yvon Cordier , F Medjdoub et al.
WOCSDICE EXMATEC 2022, May 2022, Ponta Delgada, Portugal
Conference papers hal-03681788v1

Statistical Learning Optimization for Highly Efficient Metasurface Designs

Mahmoud M. R. Elsawy , Stephane Lanteri , Régis Duvigneau , Patrice Genevet
CSE 2021 - SIAM Conference on Computational Science and Engineering, Mar 2021, Texas, United States
Conference papers inserm-03070707v1

Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO

Nephi Temahuki , François Jomard , Alain Lusson , I. Stenger , Said S. Hassani et al.
Applied Physics Letters, 2021, 118 (10), ⟨10.1063/5.0044373⟩
Journal articles hal-03188137v1

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Philippe Vennéguès , Ludovic Largeau , Virginie Brändli , Benjamin Damilano , Karine Tavernier et al.
Journal of Applied Physics, 2022, 132 (16), pp.165102. ⟨10.1063/5.0111558⟩
Journal articles hal-03966716v1

Normally-Off AlGaN/GaN HEMTs based on selective area regrowth of a P-GaN gate in nanostructured patterns

Daniel Rouly , Patrick Austin , Josiane Tasselli , Frédéric Morancho , Karine Isoird et al.
EMRS-2022 Fall Meeting European Materials Research Society, Sep 2022, Varsovie, Poland
Conference papers hal-03697766v1

Proton Energy Loss in GaN

Jean-Yves Duboz , Julie Zucchi , Eric Frayssinet , Sébastien Chenot , Maxime Hugues et al.
physica status solidi (b), 2021, 258 (8), pp.2100167. ⟨10.1002/pssb.202100167⟩
Journal articles hal-03365047v1

Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications

Atse Julien Eric N’dohi , Camille Sonneville , Thi Huong Ngo , P. de Mierry , Éric Frayssinet et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies, Jun 2021, Bristol, United Kingdom
Conference papers hal-03676503v1

Photonic integrated structures for room-temperature single-photon emitters in gallium nitride

Max Meunier , Mu Zhao , Zhengzhi Jiang , Sébastien Chenot , Philippe de Mierry et al.
Gallium Nitride Materials and Devices XVII, Jan 2022, San Francisco, France. pp.25, ⟨10.1117/12.2608175⟩
Conference papers hal-03848822v1

Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes

Quentin Fornasiero , Nicolas Defrance , Sylvie Lepilliet , Vanessa Avramovic , Yvon Cordier et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2023, 41 (1), pp.012202. ⟨10.1116/6.0002125⟩
Journal articles hal-03917965v1

Nickel Oxide–Based Heterostructures with Large Band Offsets

Robert Karsthof , Holger von Wenckstern , Jesus Zúñiga-Pérez , Christiane Deparis , Marius Grundmann et al.
physica status solidi (b), 2020, 257 (7), pp.1900639. ⟨10.1002/pssb.201900639⟩
Journal articles hal-03013796v1

Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications

Marie Lesecq , E. Frayssinet , Marc Portail , M Bah , N. Defrance et al.
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany
Conference papers hal-04037282v1

Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology

Florent Albany , François Lecourt , Ewa Walasiak , N. Defrance , Arnaud Curutchet et al.
Microelectronics Reliability, 2021, 126, pp.114291. ⟨10.1016/j.microrel.2021.114291⟩
Journal articles hal-03539673v1

Vectorial Hologram Based on Pixelated Metasurface

Qinghua Song , Arthur Baroni , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
CLEO: Applications and Technology 2020, OSA / IEEE, May 2020, Wahington, DC (virtual), United States. pp.ATh4I.6, ⟨10.1364/CLEO_AT.2020.ATh4I.6⟩
Conference papers hal-02962142v1

Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials

J Borgersen , L Vines , Y Frodason , A Kuznetsov , H von Wenckstern et al.
Journal of Physics: Condensed Matter, 2020, 32 (50), pp.415704. ⟨10.1088/1361-648X/abac8b⟩
Journal articles hal-03013791v1

Metasurface Optical Characterization Using Quadriwave Lateral Shearing Interferometry

Samira Khadir , Daniel Andrén , Ruggero Verre , Qinghua Song , Serge Monneret et al.
ACS photonics, 2021, 8 (2), pp.603-613. ⟨10.1021/acsphotonics.0c01707⟩
Journal articles hal-03161297v1

Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Loubnan Abou-Hamdan , Sobhi Hamyeh , Abdo Iskandar , Rabih Taul , Julien Brault et al.
Nanotechnology, 2020, ⟨10.1088/1361-6528/abce79⟩
Journal articles hal-03035066v1

A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures

Jong-Hoi Cho , Seung-Hyuk Lim , Min-Ho Jang , Chulwon Lee , Hwan-Seop Yeo et al.
Nanoscale Advances, 2020, 2 (4), pp.1449-1455. ⟨10.1039/D0NA00052C⟩
Journal articles hal-03035081v1

Photoassisted chemical smoothing of AlGaN surface after laser lift-off

Zhongming Zheng , Hao Long , Samuel Matta , Mathieu Leroux , Julien Brault et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (4), pp.042207. ⟨10.1116/6.0000192⟩
Journal articles hal-02931570v1

Analyzing polarized metasurface holograms by vectorial ptychography

Arthur Baroni , Qinghua Song , Rajath Sawant , Peinan Ni , Virginie Brandli et al.
Focus on Microscopy 2021 (FOM2021), Mar 2021, online, Netherlands
Conference papers hal-03183699v1

Les nouvelles diodes électroluminescentes pour l’émission UV

Julien Brault , Benjamin Damilano , Jean-Yves Duboz , Bernard Gil
Reflets de la Physique, 2022, 71, pp.16-21. ⟨10.1051/refdp/202271016⟩
Journal articles hal-03784792v1

GaN growth by MOVPE on patterned SOI substrates: from high-quality GaN platelets to micro LEDs

Kilian Baril , Pierre-Marie Coulon , Mrad Mrad , Ludovic Dupre , Guy Feuillet et al.
2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, France. pp.1-2, ⟨10.1109/CSW55288.2022.9930384⟩
Conference papers hal-03848823v1


Atse Julien Eric N’dohi , Camille Sonneville , Soufiane Saidi , Thi Huong Ngo , P. de Mierry et al.
POWER 2021 (IMAPS), Nov 2021, Tours, France
Conference papers hal-03676940v1

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT

F. Albany , A. Curutchet , N. Labat , F. Lecourt , E. Walasiak et al.
15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 237-240,
Conference papers hal-03362260v1

Controlled SOI nanopatterning for GaN pendeo-epitaxy

Mrad Mrad , Kilian Baril , Sébastien Labau , Marie Panabiere , Camille Petit-Etienne et al.
Micro and Nano Engineering Conference MNE,, Sep 2021, Turin, Italy
Conference poster hal-03448841v1

Electrical control of excitons in GaN/(Al,Ga)N quantum wells

R. Aristegui , F. Chiaruttini , Benoît Jouault , Pierre Lefebvre , Christelle Brimont et al.
Preprints, Working Papers, ... hal-03621796v1

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

E Di Russo , A Mavel , V Fan Arcara , B Damilano , Ioanna Dimkou et al.
Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩
Journal articles hal-03411327v1