Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature
C. Sgroi
,
J. Brault
,
J.-Y. Duboz
,
S. Chenot
,
P. Vennéguès
et al.
Journal articles
hal-03784787v1
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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
L Abou-Hamdan
,
Sobhe Hamyeh
,
A Iskandar
,
R Tauk
,
J Brault
et al.
Journal articles
hal-03106374v1
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Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples
B. Orfao
,
G. Di Gioia
,
B. Vasallo
,
S. Pérez
,
J. Mateos
et al.
Journal articles
hal-03741441v1
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GaN-based HEMTs operating as zero-bias microwave detectors at low temperature
G. Paz
,
I. Iniguez de La Torre
,
H. Sanchez
,
Virginie Hoel
,
Y. Cordier
et al.
13th Spanish Conference on Electron Devices, CDE 2021 , Jun 2021, Seville, Spain
Conference papers
hal-03340956v1
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Anisotropic mobility in AlGaN/GaN heterostructure with thin GaN on AlN/Sapphire template
Julien Bassaler
,
Rémi Comyn
,
C. Bougerol
,
Yvon Cordier
,
F Medjdoub
et al.
WOCSDICE EXMATEC 2022 , May 2022, Ponta Delgada, Portugal
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hal-03681788v1
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Statistical Learning Optimization for Highly Efficient Metasurface Designs
Mahmoud M. R. Elsawy
,
Stephane Lanteri
,
Régis Duvigneau
,
Patrice Genevet
CSE 2021 - SIAM Conference on Computational Science and Engineering , Mar 2021, Texas, United States
Conference papers
inserm-03070707v1
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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
Nephi Temahuki
,
François Jomard
,
Alain Lusson
,
I. Stenger
,
Said S. Hassani
et al.
Journal articles
hal-03188137v1
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On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations
Philippe Vennéguès
,
Ludovic Largeau
,
Virginie Brändli
,
Benjamin Damilano
,
Karine Tavernier
et al.
Journal articles
hal-03966716v1
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Normally-Off AlGaN/GaN HEMTs based on selective area regrowth of a P-GaN gate in nanostructured patterns
Daniel Rouly
,
Patrick Austin
,
Josiane Tasselli
,
Frédéric Morancho
,
Karine Isoird
et al.
EMRS-2022 Fall Meeting European Materials Research Society , Sep 2022, Varsovie, Poland
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hal-03697766v1
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Proton Energy Loss in GaN
Jean-Yves Duboz
,
Julie Zucchi
,
Eric Frayssinet
,
Sébastien Chenot
,
Maxime Hugues
et al.
Journal articles
hal-03365047v1
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Homo epitaxial n-doped GaN layers investigation using Raman Spectroscopy for Vertical device applications
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Thi Huong Ngo
,
P. de Mierry
,
Éric Frayssinet
et al.
EXMATEC / WOCSDICE 2021 : 15th Expert Evaluation and Control of Compounds of Semiconductor Materials and Technologies , Jun 2021, Bristol, United Kingdom
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hal-03676503v1
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Photonic integrated structures for room-temperature single-photon emitters in gallium nitride
Max Meunier
,
Mu Zhao
,
Zhengzhi Jiang
,
Sébastien Chenot
,
Philippe de Mierry
et al.
Gallium Nitride Materials and Devices XVII , Jan 2022, San Francisco, France. pp.25,
⟨10.1117/12.2608175⟩
Conference papers
hal-03848822v1
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Fabrication, and direct current and cryogenic analysis of SF6-treated AlGaN/GaN Schottky barrier diodes
Quentin Fornasiero
,
Nicolas Defrance
,
Sylvie Lepilliet
,
Vanessa Avramovic
,
Yvon Cordier
et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics , 2023, 41 (1), pp.012202.
⟨10.1116/6.0002125⟩
Journal articles
hal-03917965v1
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Nickel Oxide–Based Heterostructures with Large Band Offsets
Robert Karsthof
,
Holger von Wenckstern
,
Jesus Zúñiga-Pérez
,
Christiane Deparis
,
Marius Grundmann
et al.
Journal articles
hal-03013796v1
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Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Marie Lesecq
,
E. Frayssinet
,
Marc Portail
,
M Bah
,
N. Defrance
et al.
International Workshop on Nitride Semi-conductors, IWN 2022 , Oct 2022, Berlin, Germany
Conference papers
hal-04037282v1
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Stability of the threshold voltage in fluorine-implanted normally-off AlN/GaN HEMTs co-integrated with commercial normally-on GaN HEMT technology
Florent Albany
,
François Lecourt
,
Ewa Walasiak
,
N. Defrance
,
Arnaud Curutchet
et al.
Journal articles
hal-03539673v1
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Vectorial Hologram Based on Pixelated Metasurface
Qinghua Song
,
Arthur Baroni
,
Rajath Sawant
,
Peinan Ni
,
Virginie Brandli
et al.
Conference papers
hal-02962142v1
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Experimental exploration of the amphoteric defect model by cryogenic ion irradiation of a range of wide band gap oxide materials
J Borgersen
,
L Vines
,
Y Frodason
,
A Kuznetsov
,
H von Wenckstern
et al.
Journal articles
hal-03013791v1
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Metasurface Optical Characterization Using Quadriwave Lateral Shearing Interferometry
Samira Khadir
,
Daniel Andrén
,
Ruggero Verre
,
Qinghua Song
,
Serge Monneret
et al.
Journal articles
hal-03161297v1
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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
Loubnan Abou-Hamdan
,
Sobhi Hamyeh
,
Abdo Iskandar
,
Rabih Taul
,
Julien Brault
et al.
Journal articles
hal-03035066v1
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A broadband ultraviolet light source using GaN quantum dots formed on hexagonal truncated pyramid structures
Jong-Hoi Cho
,
Seung-Hyuk Lim
,
Min-Ho Jang
,
Chulwon Lee
,
Hwan-Seop Yeo
et al.
Journal articles
hal-03035081v1
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Photoassisted chemical smoothing of AlGaN surface after laser lift-off
Zhongming Zheng
,
Hao Long
,
Samuel Matta
,
Mathieu Leroux
,
Julien Brault
et al.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics , 2020, 38 (4), pp.042207.
⟨10.1116/6.0000192⟩
Journal articles
hal-02931570v1
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Analyzing polarized metasurface holograms by vectorial ptychography
Arthur Baroni
,
Qinghua Song
,
Rajath Sawant
,
Peinan Ni
,
Virginie Brandli
et al.
Focus on Microscopy 2021 (FOM2021) , Mar 2021, online, Netherlands
Conference papers
hal-03183699v1
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Les nouvelles diodes électroluminescentes pour l’émission UV
Julien Brault
,
Benjamin Damilano
,
Jean-Yves Duboz
,
Bernard Gil
Journal articles
hal-03784792v1
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GaN growth by MOVPE on patterned SOI substrates: from high-quality GaN platelets to micro LEDs
Kilian Baril
,
Pierre-Marie Coulon
,
Mrad Mrad
,
Ludovic Dupre
,
Guy Feuillet
et al.
Conference papers
hal-03848823v1
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MULTIPHYSICS CHARACTERIZATIONS OF VERTICAL GaN SCHOTTKY DIODES
Atse Julien Eric N’dohi
,
Camille Sonneville
,
Soufiane Saidi
,
Thi Huong Ngo
,
P. de Mierry
et al.
POWER 2021 (IMAPS) , Nov 2021, Tours, France
Conference papers
hal-03676940v1
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An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT
F. Albany
,
A. Curutchet
,
N. Labat
,
F. Lecourt
,
E. Walasiak
et al.
15th European Microwave Integrated Circuits Conference, EuMIC 2020 , Jan 2021, Utrecht, Netherlands. 237-240, https://ieeexplore.ieee.org/abstract/document/9337362
Conference papers
hal-03362260v1
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Controlled SOI nanopatterning for GaN pendeo-epitaxy
Mrad Mrad
,
Kilian Baril
,
Sébastien Labau
,
Marie Panabiere
,
Camille Petit-Etienne
et al.
Micro and Nano Engineering Conference MNE, , Sep 2021, Turin, Italy
Conference poster
hal-03448841v1
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Electrical control of excitons in GaN/(Al,Ga)N quantum wells
R. Aristegui
,
F. Chiaruttini
,
Benoît Jouault
,
Pierre Lefebvre
,
Christelle Brimont
et al.
2022
Preprints, Working Papers, ...
hal-03621796v1
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
E Di Russo
,
A Mavel
,
V Fan Arcara
,
B Damilano
,
Ioanna Dimkou
et al.
Journal articles
hal-03411327v1
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