Temperature dependence of 1200V-10A SiC power diodes: impact of design and substrate on electrical performance
Résumé
In this work, we study the impact of temperature on the static electrical parameters of 1200V power 4H-SiC diodes with various designs and architectures (Schottky, JBS, hexagonal and stripe cells) fabricated on 150 mm bulk 4H-SiC and 3C-poly SiC based substrates (SmartSiCTM). I(V) measurements were carried out in both reverse and forward modes to assess the impact of designs and substrates. Non-destructive avalanche mode was reached with similar performance (leakage, VAV) observed for both substrates (due to identical drift layer and device structure). JBS devices fabricated on SmartSiCTM exhibited a high current conduction and less resistance in the ohmic regime (compared to bulk). The observed conduction gain was further investigated at high temperatures (up to 200°C). Based on the extracted resistances, we can infer that all diodes designs (regardless of the epi or the substrate) follow the same predictive R(T) model proposed. Partitioning model was also proposed for evaluating the impact of substrate thinning on the specific differential resistance.
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