SURFACE CONDITIONING EFFECT ON VACUUM MICROELECTRONICS COMPONENTS FABRICATED BY DEEP REACTIVE ION ETCHING - Institut d'électronique, systèmes de communication et microsystèmes Accéder directement au contenu
Communication Dans Un Congrès Année : 2006

SURFACE CONDITIONING EFFECT ON VACUUM MICROELECTRONICS COMPONENTS FABRICATED BY DEEP REACTIVE ION ETCHING

Résumé

Advances in material processing such as silicon micromachining are opening the way to vacuum microelectronics. Two-dimensional vacuum components can be fabricated using the microsystems processes. We developed such devices using a single metal layer and silicon micromachining by DRIE. The latter technological step has significant impact on the characteristics of the vacuum components. This paper presents a brief summary of electron emission possibilities and the design leading to the fabrication of a lateral field emission diode. First measurement results and the aging of the devices are also discussed.
Fichier principal
Vignette du fichier
dtip06058.pdf (932.35 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00189257 , version 1 (20-11-2007)

Identifiants

Citer

A. Phommahaxay, Gaelle Bazin Lissorgues, L. Rousseau, Tarik Bourouina, P. Nicole. SURFACE CONDITIONING EFFECT ON VACUUM MICROELECTRONICS COMPONENTS FABRICATED BY DEEP REACTIVE ION ETCHING. DTIP 2006, Apr 2006, Stresa, Lago Maggiore, Italy. 5 p. ⟨hal-00189257⟩
62 Consultations
104 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More