The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures - Groupe de physique des matériaux Accéder directement au contenu
Article Dans Une Revue Microscopy and Microanalysis Année : 2023

The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures

Jonathan Houard
Pradip Dalapati
David Cooper
Eva Monroy
Lorenzo Rigutti

Résumé

By collecting simultaneously optical and chemical/morphological data from nanoscale volumes, the Photonic Atom Probe (PAP) can be applied not only to the study of the relationship between optical and structural properties of quantum emitter but also to evaluate the influence of other factors, such as the presence of point defects, on the photoluminescence. Through the analysis of multiple layers of InGaN/GaN quantum dots (QDs), grown so that the density of structural defects is higher with increasing distance from the substrate, we establish that the light emission is higher in the regions exhibiting a higher presence of structural defects. While the presence of intrinsic point defects with non-radiative recombination properties remains elusive, our result is consistent with the fact that QD layers closer to the substrate behave as traps for non-radiative point defects. This result demonstrates the potential of the PAP as a technique for the study of the optical properties of defects in semiconductors.

Dates et versions

hal-03938973 , version 1 (14-01-2023)

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Citer

Ioanna Dimkou, Jonathan Houard, Névine Rochat, Pradip Dalapati, Enrico Di Russo, et al.. The Photonic Atom Probe as a Tool for the Analysis of the Effect of Defects on the Luminescence of Nitride Quantum Structures. Microscopy and Microanalysis, 2023, ⟨10.1093/micmic/ozac051⟩. ⟨hal-03938973⟩
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