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Article Dans Une Revue Semiconductor Science and Technology Année : 2020

Single CdSe/CdS colloidal nanocrystals embedded in an Ultra-Pure SiO 2 matrix deposited by ion beam sputtering

Résumé

We report the encapsulation of high-quantum-yield CdSe/CdS colloidal nanocrystals in a smooth and ultra-pure layer of SiO 2 deposited by ion beam sputtering. The optical quality of the thin silica film is comparable to the mirror substrates used in gravitational-wave detection, with a density of impurities as low as a few ppm. We show that at least 30% of the nanocrystals survive the encapsulation process under full conservation of their favorable optical properties at the single-quantum-dot level, namely a high and stable emission rate combined with a short recombination lifetime. The emission rate of the embedded nanocrystals is increased by 100% due to the higher refractive index of the SiO 2 film, in accordance with an effective-medium interpretation. Our device prototype thus provides a perspective for designing large-scale, highquality and thickness-controlled light-emitting diodes based on semiconductor nanocrystals as active components in a durable inorganic matrix.
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Dates et versions

hal-03279125 , version 1 (06-07-2021)

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Antoine Aubret, V Dolique, Agnès Piednoir, Christophe Dujardin, Florian Kulzer, et al.. Single CdSe/CdS colloidal nanocrystals embedded in an Ultra-Pure SiO 2 matrix deposited by ion beam sputtering. Semiconductor Science and Technology, 2020, 35 (5), pp.055005. ⟨10.1088/1361-6641/ab76fb⟩. ⟨hal-03279125⟩
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