Communication Dans Un Congrès Année : 2024

A novel test structure with two active areas for eNVM reliability studies

Résumé

This paper presents a test structure with a poly floating gate shared on two actives areas. Programming and erase can be split toward these two regions with a specific arsenic implantation. The aim is to study the tunnel oxide degradation and the injection efficiency of embedded charge storage memory cells.

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Dates et versions

hal-04928959 , version 1 (04-02-2025)

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Khaled Alkema, Franck Melul, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, et al.. A novel test structure with two active areas for eNVM reliability studies. 2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS), Apr 2024, Edinburgh, United Kingdom, France. pp.1-5, ⟨10.1109/ICMTS59902.2024.10520674⟩. ⟨hal-04928959⟩
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