Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors
Résumé
The channel noise current spectral density of n-type enhancement SOS-MOS transistors versus the drain-source voltage VDs exhibits a peak not only for a floating bulk electrode but also when it is grounded. In the latter case, this peak appears at higher values of VDs. This suggests the kink effect which is now masked on the D.C. characteristics I D- V DS by a stronger multiplication. Theoretically we characterize this effect by means of an equivalent circuitry (electrical and noise) where the bulk electrode and the multiplication current generator associated with the drain space charge region are taken into account.
Mots clés
drain source voltage
equivalent circuit
FET
DC characteristics
kink effect
floating bulk electrode
grounded bulk electrode
multiplication current generator
drain space charge
electron device noise
equivalent circuits
insulated gate field effect transistors
channel noise current spectral density
n type enhancement
SOS MOS transistor
Domaines
Articles anciens
Origine : Accord explicite pour ce dépôt