Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors - Laboratoire de l'intégration, du matériau au système TOUS LABOS Accéder directement au contenu
Article Dans Une Revue Revue de Physique Appliquée Année : 1980

Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors

Résumé

The channel noise current spectral density of n-type enhancement SOS-MOS transistors versus the drain-source voltage VDs exhibits a peak not only for a floating bulk electrode but also when it is grounded. In the latter case, this peak appears at higher values of VDs. This suggests the kink effect which is now masked on the D.C. characteristics I D- V DS by a stronger multiplication. Theoretically we characterize this effect by means of an equivalent circuitry (electrical and noise) where the bulk electrode and the multiplication current generator associated with the drain space charge region are taken into account.
Fichier principal
Vignette du fichier
ajp-rphysap_1980_15_5_937_0.pdf (502.77 Ko) Télécharger le fichier
Origine : Accord explicite pour ce dépôt

Dates et versions

jpa-00244808 , version 1 (04-02-2008)

Identifiants

Citer

D. Rigaud, D. Sodini, André Touboul, J.-C. Lopez, G. Lecoy. Influence of the bulk electrode on the characteristics and the channel noise of SOS-MOS transistors. Revue de Physique Appliquée, 1980, 15 (5), pp.937-940. ⟨10.1051/rphysap:01980001505093700⟩. ⟨jpa-00244808⟩
53 Consultations
118 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More