Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals. - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Poster De Conférence Année : 2011

Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.

Résumé

Contrary to c-plane heterostructures, the absence of built-in electric fields in non-polar nitride-based heterostructures allows for the growth of thick quantum wells (QWs) without any decrease in the overlap between electron and hole wave functions [1]. However, lattice mismatched substrates are generally used to grow non-polar GaN, inducing strain in the heteroepitaxial layers that relax through the generation of non-radiative recombination centers. Here, we investigate by time-resolved photoluminescence the temperature (T) dependence of charge carriers recombination mechanisms in non-polar (Al,Ga)N/GaN quantum wells (QW) grown by molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al-content on the dynamics of excitons in the 10 - 320 K range.
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Dates et versions

hal-00631755 , version 1 (13-10-2011)

Identifiants

  • HAL Id : hal-00631755 , version 1

Citer

Pierre Corfdir, Amélie Dussaigne, H. Teisseyre, Izabella Grzegory, Tadeusz Suski, et al.. Radiative Recombination Governed Lifetimes In Non-polar (Al,Ga)N/GaN Quantum Wells Grown On Bulk GaN Crystals.. 9th International Conference on Nitride Semiconductors. ICNS9., Jul 2011, Glasgow, United Kingdom. ⟨hal-00631755⟩
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