Characterization of Integrated Antenna-Coupled Plasma-Wave Detectors With Wide Bandwidth Amplification in 130nm CMOS - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

Characterization of Integrated Antenna-Coupled Plasma-Wave Detectors With Wide Bandwidth Amplification in 130nm CMOS

Shamsun Nahar
  • Fonction : Auteur
Stephane Blink
  • Fonction : Auteur
Dominique Coquillat
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  • PersonId : 995041
Wojciech Knap
  • Fonction : Auteur
  • PersonId : 1011541
Mona M. Hella
  • Fonction : Auteur

Résumé

A fully integrated 0.3 THz antenna-coupled plasma-wave detector with 10 GHz (measured) bandwidth is presented. Fabricated in 130nm CMOS technology, the chip is formed of an E-shaped patch antenna, plasmonic based Field Effect Transistor (FET) detector and a wide bandwidth amplifier employing inductive shunt peaking. The open drain mode of operation of the detector achieves an absolute responsivity of 10 V/W with a minimum signal to noise ratio (SNR) of 40 dB over the entire bandwidth. With a drain current of 0.24 mA, the responsivity increases by 10X with a decrease in bandwidth to 3 GHz. The detector is also characterized without the on chip amplifier for imaging applications and shows a measured absolute responsivity of 150 V/W for a drain current of 5 μA at 0.3 THz.
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Dates et versions

hal-01293240 , version 1 (24-03-2016)

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Citer

Shamsun Nahar, Stephane Blink, Annick Pénarier, Dominique Coquillat, Wojciech Knap, et al.. Characterization of Integrated Antenna-Coupled Plasma-Wave Detectors With Wide Bandwidth Amplification in 130nm CMOS. 2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015, Phoenix, AZ, United States. pp.1, ⟨10.1109/MWSYM.2015.7166950⟩. ⟨hal-01293240⟩
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