Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue Physical Review Applied Année : 2016

Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells

Fedor Fedichkin
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Thierry Guillet
Pierre Valvin
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Benoit Jouault
Christelle Brimont
Thierry Bretagnon
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Pierre Lefebvre

Résumé

We report on the exciton propagation in polar ðAl; GaÞN=GaN quantum wells over several micrometers and up to room temperature. The key ingredient to achieve this result is the crystalline quality of GaN quantum wells grown on GaN substrate that limits nonradiative recombination. From the comparison of the spatial and temporal dynamics of photoluminescence, we conclude that the propagation of excitons under continuous-wave excitation is assisted by efficient screening of the in-plane disorder. Modeling within drift-diffusion formalism corroborates this conclusion and suggests that exciton propagation is still limited by the exciton scattering on defects rather than by exciton-exciton scattering so that improving interface quality can boost exciton transport further. Our results pave the way towards room-temperature excitonic devices based on gate-controlled exciton transport in wide-band-gap polar heterostructures.
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Dates et versions

hal-01353893 , version 1 (16-08-2016)
hal-01353893 , version 2 (04-01-2017)

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Citer

Fedor Fedichkin, Thierry Guillet, Pierre Valvin, Benoit Jouault, Christelle Brimont, et al.. Room-Temperature Transport of Indirect Excitons in (Al,Ga)N/GaN Quantum Wells. Physical Review Applied, 2016, 6 (1), pp.014011. ⟨10.1103/PhysRevApplied.6.014011⟩. ⟨hal-01353893v2⟩
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