Indirect excitons and electron-phonon interaction in hexagonal boron nitride - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Communication Dans Un Congrès Année : 2016

Indirect excitons and electron-phonon interaction in hexagonal boron nitride

Résumé

In this paper, we discuss our recent experiments by two-photon spectroscopy demonstrating that hBN is an indirect bandgap material. We will show that the optical properties of hBN are profoundly determined by phonon-assisted transitions involving either virtual or real excitonic states. We will present our measurements of the exciton binding energy by two-photon excitation, leading to the estimation of 6.08 eV for the single-particle bandgap in hBN. We will also discuss our experimental evidence that transverse optical phonons at the K point of the Brillouin zone assist inter-K valley scattering in hexagonal boron nitride.
Fichier non déposé

Dates et versions

hal-01399935 , version 1 (21-11-2016)

Identifiants

  • HAL Id : hal-01399935 , version 1

Citer

Guillaume Cassabois. Indirect excitons and electron-phonon interaction in hexagonal boron nitride. International Workshop on Nitride Semiconductors (IWN 2016), Oct 2016, Orlando, United States. ⟨hal-01399935⟩
52 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More