Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Poster De Conférence Année : 2018

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Résumé

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN
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Dates et versions

hal-01937531 , version 1 (28-11-2018)

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  • HAL Id : hal-01937531 , version 1

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Sylvie Contreras, Leszek Konczewicz, Sandrine Juillaguet, Herve Peyre, Mohamed Al Khalfioui, et al.. Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN. International Workshop on Nitride Semiconductor, Nov 2018, Kanazawa, Japan. ⟨hal-01937531⟩
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