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Article Dans Une Revue Chemistry of Materials Année : 2020

Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient

Résumé

Hexagonal boron nitride (hBN) is attracting much attention due to its tremendous applications including nanophotonic and electronic devices, substrates for two-dimensional (2D) materials, heat management materials, etc. To achieve the best device performance, large area hBN single crystals are required. Herein, large area (>500 microns each) high-quality (defect density < 0.52/μm2) bulk hBN single crystals are grown from molten metal solutions with a temperature gradient. The narrow Raman linewidths of the intralayer E2g mode peak and the interlayer shear mode, the strong and sharp phonon-assisted transition photoluminescence peaks, and the high thermal conductivity demonstrate that the hBN produced by this method are high crystal quality with a low density of defects. Atomic force microscope images show that atomically flat layers of hBN can be produced by exfoliation. This study not only demonstrates a new strategy for growing large hBN single crystals, but also provides high quality thick and thin hBN layers for nano device applications
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Dates et versions

hal-02615364 , version 1 (22-05-2020)

Identifiants

Citer

Jiahan Li, Yuan Chao, Christine Elias, Junyong Wang, Xiaotiang Zhang, et al.. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient. Chemistry of Materials, 2020, 32 (12), pp.5066-5072. ⟨10.1021/acs.chemmater.0c00830⟩. ⟨hal-02615364⟩
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