Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue Solid State Communications Année : 2020

Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field

I. Grigelionis
  • Fonction : Auteur
Nina Diakonova
  • Fonction : Auteur
  • PersonId : 996377
Wojciech Knap
  • Fonction : Auteur
  • PersonId : 1055215
Frederic Teppe
P. Prystawko
  • Fonction : Auteur
I. Kasalynas
  • Fonction : Auteur

Résumé

The electrically excited impurity emission from AlGaN/GaN high electron mobility transistor (HEMT) structures in external magnetic field varying from 1.2 T to 1.5 T was investigated in this work at temperature of 4.2 K. We have observed the sharp emission line at (263 ± 1) cm−1 with FWHM of (5.8 ± 0.8) cm−1, which we have attributed to radiative electronic transitions in residual oxygen impurity atoms. The blueshift of resonant transition frequency due to presence of external magnetic field was observed. The width of the peak was found to be defined mainly by the thermal broadening at 4.2 K.
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Dates et versions

hal-02986295 , version 1 (02-11-2020)

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Citer

I. Grigelionis, Nina Diakonova, Wojciech Knap, Frederic Teppe, P. Prystawko, et al.. Radiation from shallow oxygen impurity in AlGaN/GaN HEMT structures in magnetic field. Solid State Communications, 2020, 320, pp.114019. ⟨10.1016/j.ssc.2020.114019⟩. ⟨hal-02986295⟩
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