Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates
Résumé
Herein, we report an original adaptation of an XRD set-up in order to measure the miscut angle values in our 4H-SiC on axis substrates with a high precision of ± 0.02°. This study also reveals a correlation between the formation of wide steps on 4H-SiC(0001) and the relative orientation of the SiC crystalline planes versus the gas flow direction. These two results paves the way towards the reproducible growth of graphene over wide SiC steps.
Domaines
Physique [physics]
Origine : Fichiers produits par l'(les) auteur(s)