Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Proceedings/Recueil Des Communications Année : 2022

Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates

Résumé

Herein, we report an original adaptation of an XRD set-up in order to measure the miscut angle values in our 4H-SiC on axis substrates with a high precision of ± 0.02°. This study also reveals a correlation between the formation of wide steps on 4H-SiC(0001) and the relative orientation of the SiC crystalline planes versus the gas flow direction. These two results paves the way towards the reproducible growth of graphene over wide SiC steps.
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Dates et versions

hal-03845325 , version 1 (09-11-2022)

Identifiants

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Haitham Hrich, Matthieu Moret, Olivier Briot, Matthieu Paillet, Jean Manuel Decams, et al.. Toward the Reproducible Growth of Graphene on Wide SiC Steps: A Study of the Geometric Properties of 4H-SiC (0001) Substrates. 1062, pp.59-63, 2022, ⟨10.4028/p-1ak21z⟩. ⟨hal-03845325⟩
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