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Article Dans Une Revue Journal of Non-Crystalline Solids Année : 2012

Hydrogenated microcrystalline silicon thin films deposited by RF-PECVD under low ion bombardment energy using voltage waveform tailoring

E.V. Johnson
S. Pouliquen
  • Fonction : Auteur
Pierre-Alexandre Delattre
  • Fonction : Auteur
Jean-Paul Booth

Résumé

We present experimental results for hydrogenated amorphous and microcrystalline silicon (a-Si:H and μc-Si:H) thin films deposited by PECVD while using a voltage waveform tailoring (VWT) technique to create an electrical asymmetry in the reactor. VWT dramatically modifies the mean ion bombardment energy (IBE) during growth, and we show that for a constant peak-to-peak excitation voltage (VPP), waveforms resembling “peaks” or “valleys” result in very different material properties. Using Raman scattering spectroscopy, we show that the crystallinity of the material depends strongly on the IBE, as controlled by VWT. A detailed examination of the Raman scattering spectra reveals that the narrow peak at 520 cm− 1 is disproportionately enhanced by lowering the IBE through the VWT technique. We examine this effect for a range of process parameters, varying the pressure, hydrogen–silane dilution ratio, and total flow of H2. In addition, the Sisingle bondHX bonding in silicon thin films deposited using VWT is characterised for the first time, showing that the hydrogen bonding character is changed by the IBE. These results demonstrate the potential for VWT in controlling the IBE during thin film growth, thus ensuring that application-appropriate film densities and crystallinities are achieved, independent of the injected RF power.
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Dates et versions

hal-01549432 , version 1 (28-06-2017)

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Citer

E.V. Johnson, S. Pouliquen, Pierre-Alexandre Delattre, Jean-Paul Booth. Hydrogenated microcrystalline silicon thin films deposited by RF-PECVD under low ion bombardment energy using voltage waveform tailoring. Journal of Non-Crystalline Solids, 2012, 358 (17), pp.1974-1977. ⟨10.1016/j.jnoncrysol.2012.01.014⟩. ⟨hal-01549432⟩
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