Time resolved hyper-Raman surface spectroscopy of (111) silicon - Laboratoire Ondes et Matière d'Aquitaine Access content directly
Conference Papers Year : 2023

Time resolved hyper-Raman surface spectroscopy of (111) silicon


We performed a time-resolved Hyper-Raman spectroscopy of a (111) silicon wafer upon its excitation by a near IR optical pulse. Upon excitation of the silicon wafer by the optical pulse, we record the broadening and increase of the Stokes and anti-Stokes bands centered around the Si lattice phonon and SiO2 mode centered at ~610 cm -1 and ~1100 cm -1 , respectively. This unique technic makes it possible to reveal the electron-phonon scattering which thermalize the hot carriers with the lattice on time scale of 100 to 300 fs
Fichier principal
Vignette du fichier
IRMMW-THz2023_ABSTRACT_time_resolved_Hyper_Raman_Si_Vers_Final.pdf (227.11 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-04186024 , version 1 (23-08-2023)


  • HAL Id : hal-04186024 , version 1


Laetitia Daltstein, Marc Tondusson, Jérôme Degert, Eric Freysz. Time resolved hyper-Raman surface spectroscopy of (111) silicon. 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), IRMMW-THz Society, Sep 2023, Montréal, Canada. ⟨hal-04186024⟩


8 View
4 Download


Gmail Facebook X LinkedIn More