THz-near IR hyper-Raman surface spectroscopy of silicon wafer surface
Abstract
We recorded the hyper-Raman spectra resulting from the interaction of picosecond visible and ultrashort THz pulses at the surface of (111) silicon wafer. It reveals the signature of the Si lattice phonon and SiO2 mode centered at ~610 cm -1 and ~1100 cm - 1 , respectively. This technique also evidences the growing of the SiO2 layer at the surface of the silicon wafer exposed to ambient air
Domains
Optics [physics.optics]
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IRMMW-THz2023_ABSTRACT_Si_spectroscopie_JD_Vers_final.pdf (189.92 Ko)
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