THz-near IR hyper-Raman surface spectroscopy of silicon wafer surface - Laboratoire Ondes et Matière d'Aquitaine Access content directly
Conference Papers Year : 2023

THz-near IR hyper-Raman surface spectroscopy of silicon wafer surface

Abstract

We recorded the hyper-Raman spectra resulting from the interaction of picosecond visible and ultrashort THz pulses at the surface of (111) silicon wafer. It reveals the signature of the Si lattice phonon and SiO2 mode centered at ~610 cm -1 and ~1100 cm - 1 , respectively. This technique also evidences the growing of the SiO2 layer at the surface of the silicon wafer exposed to ambient air
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Dates and versions

hal-04186036 , version 1 (23-08-2023)

Identifiers

  • HAL Id : hal-04186036 , version 1

Cite

Laetitia Dalstein, Marc Tondusson, Jérôme Degert, Eric Freysz. THz-near IR hyper-Raman surface spectroscopy of silicon wafer surface. 2023 48th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2023), IRMMW-THz Society, Sep 2023, Montréal, Canada. ⟨hal-04186036⟩

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