Imaging the Quantum Capacitance of Strained MoS2 Monolayer by Electrostatic Force Microscopy - Laboratoire de Physique des Solides d'Orsay
Pré-Publication, Document De Travail Année : 2023

Imaging the Quantum Capacitance of Strained MoS2 Monolayer by Electrostatic Force Microscopy

Résumé

We implemented radio frequency-assisted electrostatic force microscopy (RF-EFM) to investigate the electric field response of biaxially strained molybdenum disulfide (MoS2) monolayers (MLs), produced via hydrogen (H)-ion irradiation. MoS2 ML, a semiconducting transition metal dichalcogenide, has recently attracted significant attention due to its promising opto-electronic properties, further tunable by strain. Here, we take advantage of the RF assistance to distinguish the electrostatic response of atomic scale defects, such as sulfur vacancies or H-passivated sulfur vacancies, from that of the intrinsic quantum capacitance of the strained ML. In addition, measurements at fixed frequency (fRF = 300 MHz) elucidate the spatial variation of the quantum capacitance over mesoscopic length scales, due to the local modulation of the defect-driven n-type nature of the strained ML. Our finite-frequency capacitance imaging technique, which is non-invasive and nanoscale, opens up new possibilities for the investigation of frequency and spatial-dependent phenomena, such as the electron compressibility in quantum materials, which are difficult to measure by other methods.

Dates et versions

hal-04272935 , version 1 (06-11-2023)

Identifiants

Citer

Cinzia Di Giorgio, Elena Blundo, Julien Basset, Giorgio Pettinari, Marco Felici, et al.. Imaging the Quantum Capacitance of Strained MoS2 Monolayer by Electrostatic Force Microscopy. 2023. ⟨hal-04272935⟩
25 Consultations
0 Téléchargements

Altmetric

Partager

More