Percolation and superconductivity in ion-implanted aluminium films
Résumé
Ion implantation of Si and Ge in Al thin films at 8 K produces alloys exhibiting enhanced superconducting transition temperatures (up to 8.35 K for Al 60Si40) and a metal-non metal transition at a volume concentration of 45 % Si. These results are compared to those obtained by other authors on films prepared by evaporation on cold substrate.
Mots clés
Origine | Accord explicite pour ce dépôt |
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