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Article Dans Une Revue Diamond and Related Materials Année : 2012

An assessment of contact metallization for high power and high temperature diamond Schottky devices

Résumé

Different metals W, Al, Ni and Cr were evaluated as Schottky contacts on the same p-type lightly boron doped homoepitaxial diamond layer. The current-voltage (I-V) characteristics, the series resistance and the thermal stability are discussed in the range of RT to 625 K for all Schottky devices. High current densities close to 3.2 kA/cm2 are displayed and as the series resistance decreases with increasing temperature, proving the potential of diamond for high power and high temperature devices. The thermal stability of metal/diamond interface investigated with regards to the Schottky barrier height (SBH) and ideality factor n fluctuations indicated that Ni and W are thermally stable in the range of RT to 625 K. Current-voltage measurements at reverse bias indicated a maximum breakdown voltage of 70 V corresponding to an electric field of 3.75 MV/cm. Finally, these electrical measurements have been completed with mechanical adhesion tests of contact metallizations on diamond by nano-scratching technique. These studies clearly reveal Ni as a promising contact metallization for high power, high temperature and good mechanical strength diamond Schottky barrier diode applications.

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Matériaux
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Dates et versions

hal-00881007 , version 1 (07-11-2013)

Identifiants

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Sodjan Koné, Henri Schneider, Karine Isoird, Fabien Thion, Jocelyn Achard, et al.. An assessment of contact metallization for high power and high temperature diamond Schottky devices. Diamond and Related Materials, 2012, vol. 27-28, pp. 23-28. ⟨10.1016/j.diamond.2012.05.007⟩. ⟨hal-00881007⟩
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