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Article Dans Une Revue Physical Review Letters Année : 2022

Recombination time mismatch and spin dependent photocurrent at a ferromagnetic-metal/semiconductor tunnel junction

Résumé

We report on carrier dynamics in a spin photodiode based on a ferromagnetic-metal–GaAs tunnel junction. We show that the helicity-dependent current is determined not only by the electron spin polarization and spin asymmetry of the tunneling but in great part by a dynamical factor resulting from the competition between tunneling and recombination in the semiconductor, as well as by a specific quantity: the charge polarization of the photocurrent. The two latter factors can be efficiently controlled through an electrical bias. Under longitudinal magnetic field, we observe a strong increase of the signal arising from inverted Hanle effect, which is a fingerprint of its spin origin. Our approach represents a radical shift in the physical description of this family of emerging spin devices.
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Dates et versions

hal-03861528 , version 1 (20-11-2022)

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Viatcheslav I Safarov, Igor V Rozhansky, Ziqi Zhou, Bo Xu, Zhongming Wei, et al.. Recombination time mismatch and spin dependent photocurrent at a ferromagnetic-metal/semiconductor tunnel junction. Physical Review Letters, 2022, 128 (5), pp.057701. ⟨10.1103/PhysRevLett.128.057701⟩. ⟨hal-03861528⟩
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