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Article Dans Une Revue Applied Physics Letters Année : 2006

Tunable plasma wave resonant detection of optical beating in high electron mobility transistor

Résumé

We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor. We show that the fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate-voltage in the range 75–490 GHz. The observed frequency dependence on gate-bias is found to be in good agreement with the theoretical plasma waves dispersion law.
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Dates et versions

hal-00105454 , version 1 (11-10-2006)

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Jérémi Torres, P. Nouvel, A. Akwoue-Ondo, F. Teppe, A. Shchepetov, et al.. Tunable plasma wave resonant detection of optical beating in high electron mobility transistor. Applied Physics Letters, 2006, 89 (20), pp.201101.1-201101.3. ⟨10.1063/1.2388142⟩. ⟨hal-00105454⟩
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