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Pré-Publication, Document De Travail Année : 2007

1/f Tunnel Current Noise through Si-bound Alkyl Monolayers

Résumé

We report low frequency tunnel current noise characteristics of an organic monolayer tunnel junction. The measured devices, n-Si/alkyl chain (C18H37)/Al junctions, exhibit a clear 1/ f γ power spectrum noise with 1< γ <1.2. We observe a slight bias-dependent background of the normalized current noise power spectrum (SI/I²). However, a local increase is also observed over a certain bias range, mainly if V > 0.4 V, with an amplitude varying from device to device. We attribute this effect to an energy-dependent trap-induced tunnel current. We find that the background noise, SI, scales with . A model is proposed showing qualitative agreements with our experimental data.
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Dates et versions

hal-00125398 , version 1 (19-01-2007)
hal-00125398 , version 2 (10-05-2007)
hal-00125398 , version 3 (29-09-2007)

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Nicolas Clement, Stephane Pleutin, Oliver Seitz, Stephane Lenfant, Dominique Vuillaume. 1/f Tunnel Current Noise through Si-bound Alkyl Monolayers. 2007. ⟨hal-00125398v3⟩
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