Electron induced dissociation of hydrogen or deuterium-silicon complexes in GaAs ; application to reliability of GaAs based electronic or optoelectronic devices - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Materials Science and Engineering: B Année : 2001

Electron induced dissociation of hydrogen or deuterium-silicon complexes in GaAs ; application to reliability of GaAs based electronic or optoelectronic devices

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hal-00152489 , version 1 (07-06-2007)

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  • HAL Id : hal-00152489 , version 1

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S. Silvestre, D. Bernard-Loridant, S. Meziere, E. Constant. Electron induced dissociation of hydrogen or deuterium-silicon complexes in GaAs ; application to reliability of GaAs based electronic or optoelectronic devices. Materials Science and Engineering: B, 2001, B80, pp.270-273. ⟨hal-00152489⟩
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