Terahertz radiation from heavy-ion-irradiated In$_{0.53}Ga_{0.47}$As photoconductive antenna excited at 1.55 $\mu$m - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2005

Terahertz radiation from heavy-ion-irradiated In$_{0.53}Ga_{0.47}$As photoconductive antenna excited at 1.55 $\mu$m

Résumé

We investigate terahertz (THz) emission from heavy-ion-irradiated In0.53Ga0.47As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In0.53Ga0.47As layer is less than 200 fs, the steady-state mobility is 490 cm2 V–1 s–1, and the dark resistivity is 3 Omega cm. The spectrum of the electric field radiating from the Br+-irradiated In0.53Ga0.47As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
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Dates et versions

in2p3-00025172 , version 1 (05-12-2005)

Identifiants

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N. Chimot, J. Mangeney, L. Joulaud, P. Crozat, H. Bernas, et al.. Terahertz radiation from heavy-ion-irradiated In$_{0.53}Ga_{0.47}$As photoconductive antenna excited at 1.55 $\mu$m. Applied Physics Letters, 2005, 87, pp.193510. ⟨10.1063/1.2126110⟩. ⟨in2p3-00025172⟩
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