Spectroscopy of a bulk microcavity grown on Si (111). - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Japanese Journal of Applied Physics Année : 2005

Spectroscopy of a bulk microcavity grown on Si (111).

Résumé

We report the experimental observation of the exciton–photon strong coupling regime in a GaN microcavity. The structure has been grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom one. Angle resolved reflectivity and photoluminescence experiments have allowed to demonstrate the exciton–photon strong coupling regime, characterized by a Rabi splitting of 31 meV at 5 K. From the modeling of experiments, the oscillator strengths of excitons A and B are evaluated and compared to the values previously published. Then, the design of the bulk microcavity is optimized in order to maintain the strong coupling regime at room temperature; our calculations predict a Rabi splitting of 33 meV at 300 K in this case. A second kind of structure based on GaN/AlGaN quantum wells is also proposed, leading to an expected splitting of 19 meV at 300 K.
Fichier non déposé

Dates et versions

hal-00272585 , version 1 (11-04-2008)

Identifiants

Citer

F. Nataly, D. Byrne, M. Mihailovic, A. Vasson, Joël Leymarie, et al.. Spectroscopy of a bulk microcavity grown on Si (111).. Japanese Journal of Applied Physics, 2005, 44 (1), pp.4902-4908. ⟨10.1143/JJAP.44.4902⟩. ⟨hal-00272585⟩
28 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More