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Article Dans Une Revue Journal of Materials Science: Materials in Electronics Année : 2008

Evaluation of photoelectrical properties of Bi doped CdTe crystals

Résumé

Nonequilibrium carrier generation, transport, and recombination features have been investigated in Bi-doped and Yb-codoped bulk CdTe crystals, using time-resolved picosecond free-carrier and photorefractive grating techniques. Peculiarities of deep-impurity dependent carrier generation were studied at below band-gap photoexcitation using 1064 nm wavelength. Carrier transport in light created space charge field provided the instantaneous diffusion coefficient values, dependent on excitation energy, and revealed a sign of the dominant photoexcited carriers in the crystals. The studies provided also a deeper insight into an initial occupation of deep impurity levels, which was found strongly dependent on doping and co-doping. At low Bi density (2 × 1017 cm−3), the hole generation was dominant, while at higher doping (8 × 1017 cm−3) the bipolar plasma generation prevailed. Codoping by Yb (∼5 × 1017 cm−3) revealed deep donor features of deep defects and formation of a strong space charge field. Carrier dynamics in the given crystals was compared with CdTe:V ones, where vanadium is known to form the mid-gap donor levels.

Domaines

Matériaux

Dates et versions

hal-00369084 , version 1 (18-03-2009)

Identifiants

Citer

Arunas Kadys, Kestutis Jarašiunas, E. Saucedo, E. Dieguez, Jean-Claude Launay, et al.. Evaluation of photoelectrical properties of Bi doped CdTe crystals. Journal of Materials Science: Materials in Electronics, 2008, 19 (Supplement 1), pp.234-238. ⟨10.1007/s10854-008-9694-1⟩. ⟨hal-00369084⟩

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