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Article Dans Une Revue Applied Physics Letters Année : 2009

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Résumé

We report the effect of Mg doping on the growth kinetics of semipolar GaN(112¯2) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(112¯2). We observe an enhancement of Mg incorporation in GaN(112¯2) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.
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Dates et versions

hal-00438206 , version 1 (02-12-2009)

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L. Lahourcade, Julien Pernot, A. Wirthmüller, Marie-Pierre Chauvat, Pierre Ruterana, et al.. Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics. Applied Physics Letters, 2009, 95 (17), pp.171908. ⟨10.1063/1.3256189⟩. ⟨hal-00438206⟩
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