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Article Dans Une Revue IEEE Transactions on Semiconductor Manufacturing Année : 2008

Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below

Résumé

The length of MOSFET channels is an important circuit design parameter, and this paper focuses on a new industrially-compatible technique using gate-to-channel measurements Cgc(Vg) to provide accurate extraction of the channel length. Thanks to fully-automatic probers, the technique provides large scale extractions and so, statistical-based results can be extracted with a maximized reliability. An in-depth study of parasitic capacitances has been performed to improve the extraction accuracy to within a few nanometers.
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Dates et versions

hal-00465752 , version 1 (21-03-2010)

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Dominique Fleury, Antoine Cros, Krunoslav Romanjek, David Roy, Franck Perrier, et al.. Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below. IEEE Transactions on Semiconductor Manufacturing, 2008, 21 (4), pp.504 - 512. ⟨10.1109/TSM.2008.2004316⟩. ⟨hal-00465752⟩
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