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Article Dans Une Revue Applied Physics Letters Année : 2010

Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots

Résumé

We present homogeneous line width measurements of the intraband transition at 1.55 mu m in GaN/AlN quantum dots by means of nonlinear spectral hole-burning experiments. The square-root dependence of the differential transmission signal with the incident pump power reveals the importance of electron-electron scattering in the population relaxation dynamics. We find on the contrary that this scattering process plays a minor role in the coherence relaxation dynamics since the homogeneous linewidth of 15 meV at 5 K does not depend on the incident pump power. This suggests the predominance of other dephasing mechanisms such as spectral diffusion, and temperature-dependent measurements support this hypothesis.
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Dates et versions

hal-00517734 , version 1 (15-09-2010)

Identifiants

  • HAL Id : hal-00517734 , version 1

Citer

Dac Trung Nguyen, Wolf Wuester, Philippe Roussignol, Christophe Voisin, Guillaume Cassabois, et al.. Homogeneous linewidth of the intraband transition at 1.55µm in GaN/AlN quantum dots. Applied Physics Letters, 2010, 97, pp.061903. ⟨hal-00517734⟩
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