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Article Dans Une Revue physica status solidi (a) Année : 2005

Terahertz generation by plasma waves in nanometer gate high electron mobility transistors

J. Lusakowski
  • Fonction : Auteur
Frederic Teppe
Nina Diakonova
  • Fonction : Auteur
  • PersonId : 883858
Wojciech Knap
  • Fonction : Auteur
  • PersonId : 1011541
T. Parenty
  • Fonction : Auteur
S. Bollaert
A. Cappy
V. Popov
  • Fonction : Auteur
Ms Shur
  • Fonction : Auteur

Résumé

A resonant voltage tuneable radiation (0.4 THz-1.0 THz) from the gated two dimensional electron gas in a 60 nm InGaAs field effect transistor was investigated. We show that (i) the observed emission appears once the drain-to-source voltage, U-DS, exceeds the threshold value, U-TH; (ii) the resonant frequency can be tuned by U,,, in agreement with the current driven plasma instability model of Dyakonov and Shur; (iii) by applying a quantizing magnetic field one increases U-TH linearly with the magnetic field while the evolution of the emission signal is approximately a universal function of (U-DS - U-TH). (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.

Dates et versions

hal-00540643 , version 1 (28-11-2010)

Identifiants

Citer

J. Lusakowski, Frederic Teppe, Nina Diakonova, Ym Meziani, Wojciech Knap, et al.. Terahertz generation by plasma waves in nanometer gate high electron mobility transistors. physica status solidi (a), 2005, 202, pp.656-659. ⟨10.1002/pssa.200460468⟩. ⟨hal-00540643⟩
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