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Communication Dans Un Congrès Année : 2006

Spectroscopy of a single Si donor by the resonant tunnelling experiment

M. Baj
  • Fonction : Auteur
M. Gryglas
  • Fonction : Auteur
Benoit Jouault
Duncan Kennedy Maude
  • Fonction : Auteur
G. Faini
U. Gennser
A. Cavanna

Résumé

Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X-xy and X-z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X-xy states can be seen without any phonon participation.

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Dates et versions

hal-00541617 , version 1 (30-11-2010)

Identifiants

  • HAL Id : hal-00541617 , version 1

Citer

M. Baj, M. Gryglas, Benoit Jouault, Duncan Kennedy Maude, G. Faini, et al.. Spectroscopy of a single Si donor by the resonant tunnelling experiment. 35th International School on the Physics of Semiconducting Compounds, Jun 2006, Jaszowiec (POLAND), France. pp.157-162. ⟨hal-00541617⟩
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