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Communication Dans Un Congrès Année : 2009

Transport Properties of Disordered Graphene Layers

M. Gryglas-Borysiewicz
  • Fonction : Auteur
Benoit Jouault
J. Tworzydlo
  • Fonction : Auteur
S. Lewinska
  • Fonction : Auteur
W. Strupinski
  • Fonction : Auteur
J. M. Baranowski
  • Fonction : Auteur

Résumé

Samples consisting of a few layers of graphene obtained by thermal decomposition of SiC were studied by means of transport experiments at 4 K and in a magnetic field up to 7 T. Transport data show that the samples have a two-dimensional character. Magnetoresistance has an approximately linear character at high magnetic fields, which has been previously observed in graphite samples, and a negative magnetoresistance, at low magnetic fields. The transverse resistivity rho(xy) is nonlinear as a function of B, which can be described using a many-carrier model
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Dates et versions

hal-00543287 , version 1 (06-12-2010)

Identifiants

  • HAL Id : hal-00543287 , version 1

Citer

M. Gryglas-Borysiewicz, Benoit Jouault, J. Tworzydlo, S. Lewinska, W. Strupinski, et al.. Transport Properties of Disordered Graphene Layers. 4th Workshop on Quantum Chaos and Localisation Phenomena, May 2009, Warsaw (POLAND), France. pp.838-840. ⟨hal-00543287⟩
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