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Communication Dans Un Congrès Année : 1998

Nanometre scale reactive ion etching of GaN epilayers

Dominique Coquillat
  • Fonction : Auteur
  • PersonId : 869119
Sk Murad
  • Fonction : Auteur
A. Ribayrol
  • Fonction : Auteur
Cjm Smith
  • Fonction : Auteur
Rm de La Rue
  • Fonction : Auteur
Cdw Wilkinson
  • Fonction : Auteur
Olivier Briot
Roger Aulombard
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  • PersonId : 883802

Résumé

We have demonstrated a process for the fabrication of sub-micron structures using high resolution etching to transfer patterns by masking with a bilayer of Titanium and SiNX. Reactive ion etching (RIE) was performed on GaN epilayers grown on (0001) sapphire by metal organic vapour phase epitaxy (MOVPE). Various chemistries were used to etch GaN including: HBr, SiCl4/HBr, CH4/H-2, NH3/CH4/H-2 and CH4/H-2/O-2 I?Patterns including pillars, holes and gratings with feature: sizes ranging from 200 nm to 1 mu m were produced. In a CH4/H-2 plasma, quasi-vertical etching was achieved with sidewall angles greater than 81 degrees.
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Dates et versions

hal-00546188 , version 1 (13-12-2010)

Identifiants

  • HAL Id : hal-00546188 , version 1

Citer

Dominique Coquillat, Sk Murad, A. Ribayrol, Cjm Smith, Rm de La Rue, et al.. Nanometre scale reactive ion etching of GaN epilayers. 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials (ICSCIII-N 97), Aug 1997, STOCKHOLM (SWEDEN), Sweden. pp.1403-1406. ⟨hal-00546188⟩
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