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Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2003

Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots

Guillaume Cassabois
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J. Tignon
Gérald Bastard
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Résumé

We present an experimental and theoretical study of the existence of acoustic phonon sidebands in the emission line of single self-assembled InAs/GaAs quantum dots. Temperature-dependent photoluminescence measurements reveal a deviation from a Lorentzian profile with the appearance of lateral sidebands. We obtain an excellent agreement with calculations done in the framework of the Huang-Rhys formalism. We conclude that the only relevant parameter for the observation of acoustic phonon sidebands is the linewidth of the central zero-phonon line. At high temperature, the quasi-Lorentzian quantum dot line appears to be fully determined by the acoustic phonon sidebands.

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Dates et versions

hal-00546643 , version 1 (14-12-2010)

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I. Favero, Guillaume Cassabois, R. Ferreira, D. Darson, C. Voisin, et al.. Acoustic phonon sidebands in the emission line of single InAs/GaAs quantum dots. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2003, 68, pp.233301. ⟨10.1103/PhysRevB.68.233301⟩. ⟨hal-00546643⟩
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