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Article Dans Une Revue Applied Physics Letters Année : 2011

Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths

Résumé

We report on the nonlinear optical absorption of InN / InxGa1−xN (x=0.8, 0.9) multiple-quantum-well structures characterized at 1.55 µm by the Z-scan method in order to obtain the effective nonlinear absorption coefficient (α2) of the samples at high repetition rate. Saturable absorption is observed for the sample with x=0.9, with an effective α2~−9x103 cm /GW for the studied optical regime. For lower In content in the barrier, reverse saturable absorption is observed, which is attributed to two-photon absorption.

Dates et versions

hal-00579968 , version 1 (25-03-2011)

Identifiants

Citer

F. B. Naranjo, P. K. Kandaswamy, S. Valdueza-Felip, V. Calvo, M. Gonzalez-Herraez, et al.. Nonlinear absorption of InN/InGaN multiple-quantum-well structures at optical telecommunication wavelengths. Applied Physics Letters, 2011, 98, pp.031902. ⟨10.1063/1.3535609⟩. ⟨hal-00579968⟩
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