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Article Dans Une Revue Electronics Letters Année : 2010

Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers

Alaaeddine Ramadan
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Tibault Reveyrand
Audrey Martin
Jean-Michel Nebus
Philippe Bouysse

Résumé

This presented study focuses on the impact of gate-source voltage waveforms on power added efficiency performances of GaN HEMTs for the design of class F and class F-1 amplifiers. It is shown that second-harmonic signal injection at the gate port of transistors can lead to efficiency improvements in the case of class F operation and efficiency deteriorations in the case of class F-1 operation. This work is applied to a 15 W GaN HEMT die from Cree at a fundamental frequency Fo equal to 2 GHz. Calibrated on-wafer time domain measurements are reported.
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Dates et versions

hal-00580592 , version 1 (28-03-2011)

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Alaaeddine Ramadan, Tibault Reveyrand, Audrey Martin, Jean-Michel Nebus, Philippe Bouysse, et al.. Experimental study on effect of second-harmonic injection at input of classes F and F-1 GaN power amplifiers. Electronics Letters, 2010, 46 (8), pp.570-572. ⟨10.1049/el.2010.0392⟩. ⟨hal-00580592⟩

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