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Article Dans Une Revue Japanese Journal of Applied Physics Année : 2010

Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices

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Dates et versions

hal-00596309 , version 1 (27-05-2011)

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  • HAL Id : hal-00596309 , version 1

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Emmanuel Nowak, E. Vianello, L. Perniola, Marc Bocquet, G. Molas, et al.. Charge Localization during Program and Retention in Nitrided Read Only Memory-Like Nonvolatile Memory Devices. Japanese Journal of Applied Physics, 2010, 49, pp.04DD12. ⟨hal-00596309⟩
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