Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature - CNRS - Centre national de la recherche scientifique Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2009

Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature

Résumé

By combining optical spin injection techniques with transport spectroscopy tools, we demonstrate a spin-photodetector allowing for the electrical measurement and active filtering of conduction band electron spin at room temperature in a simple nonmagnetic GaAsN semiconductor structure. By switching the polarization of the incident light from linear to circular, we observe a spin dependent photoconductivity change reaching up to 40% without the need of an external magnetic field. The spin dependent photoconductivity change relies on the efficient spin filtering effect of conduction band electrons on N-induced Ga self-interstitial deep paramagnetic centers.

Dates et versions

hal-00630209 , version 1 (07-10-2011)

Identifiants

Citer

F. Zhao, Andrea Balocchi, A. Kunold, Julian Carrey, Hélène Carrère, et al.. Spin-dependent photoconductivity in nonmagnetic semiconductors at room temperature. Applied Physics Letters, 2009, 95 (24), pp.241104. ⟨10.1063/1.3273393⟩. ⟨hal-00630209⟩
61 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More